Patents by Inventor William Hunks
William Hunks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11476158Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.Type: GrantFiled: September 3, 2015Date of Patent: October 18, 2022Assignee: ENTEGRIS, INC.Inventors: Philip S. H. Chen, William Hunks, Steven Lippy, Ruben Remco Lieten
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Patent number: 10870921Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.Type: GrantFiled: December 20, 2014Date of Patent: December 22, 2020Assignee: ENTEGRIS, INC.Inventors: Thomas M. Cameron, William Hunks
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Patent number: 10043658Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: GrantFiled: January 4, 2018Date of Patent: August 7, 2018Assignee: Entegris, Inc.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Publication number: 20180130654Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: ApplicationFiled: January 4, 2018Publication date: May 10, 2018Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Publication number: 20180130706Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.Type: ApplicationFiled: September 3, 2015Publication date: May 10, 2018Applicant: Entegris, Inc.Inventors: Philip S.H. Chen, William Hunks, Steven Lippy, Ruben Remco Lieten
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Patent number: 9637395Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.Type: GrantFiled: September 26, 2013Date of Patent: May 2, 2017Assignee: Entegris, Inc.Inventors: Weimin Li, David W. Peters, Scott L. Battle, William Hunks
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Publication number: 20170103888Abstract: A precursor composition is described, useful for low temperature (<150° C.) vapor deposition of silicon dioxide. The precursor composition includes hexachlorodisilane, water, and nitrogenous catalyst including an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide. Compositions and processes for forming silicon dioxide at a low temperature with alternative chemistries are also described, e.g., a precursor composition of chloroaminosilane and water, or a precursor composition of chlorosilane and ethanolamine, which may be utilized in pulsed chemical vapor deposition or atomic layer deposition processes.Type: ApplicationFiled: October 13, 2016Publication date: April 13, 2017Inventors: Dingkai Guo, Bryan C. Hendrix, Yuqi Li, Susan V. DiMeo, Weimin Li, William Hunks
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Patent number: 9537095Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: GrantFiled: July 16, 2014Date of Patent: January 3, 2017Assignee: Entegris, Inc.Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder, Thomas H. Baum
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Publication number: 20160362790Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.Type: ApplicationFiled: December 20, 2014Publication date: December 15, 2016Applicant: ENTEGRIS, INC.Inventors: Thomas M. Cameron, William Hunks
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Publication number: 20160343795Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t-AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCl4; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4-x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.Type: ApplicationFiled: May 21, 2016Publication date: November 24, 2016Applicant: Entegris, Inc.Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
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Publication number: 20160225615Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Applicant: Entegris, Inc.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 9373677Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4;TiCl4; tBuN?Nb(NEt2)3; tBuN?Nb(NMe2)3; t-BuN?Nb(NEtMe)3; t-AmN?Nb(NEt2)3; t-AmN?Nb(NEtMe)3; t-AmN?Nb(NMe2)3; t-AmN?Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.Type: GrantFiled: June 23, 2011Date of Patent: June 21, 2016Assignee: ENTEGRIS, INC.Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
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Patent number: 9337054Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: GrantFiled: June 27, 2008Date of Patent: May 10, 2016Assignee: ENTEGRIS, INC.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 9269582Abstract: An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.Type: GrantFiled: March 22, 2012Date of Patent: February 23, 2016Assignee: ENTEGRIS, INC.Inventors: Oleg Byl, Chongying Xu, William Hunks, Richard S. Ray
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Patent number: 9219232Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: April 11, 2014Date of Patent: December 22, 2015Assignee: ENTEGRIS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20150251920Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.Type: ApplicationFiled: September 26, 2013Publication date: September 10, 2015Applicant: ENTEGRIS, INC.Inventors: Weimin Li, David W. Peters, Scott L. Battle, William Hunks
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Patent number: 9034688Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: GrantFiled: March 18, 2014Date of Patent: May 19, 2015Assignee: ENTEGRIS, INC.Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott
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Publication number: 20140329357Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: ApplicationFiled: July 16, 2014Publication date: November 6, 2014Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S.H. Chen, Jeffrey F. Roeder, Thomas H. Baum
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Patent number: 8877549Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: GrantFiled: March 24, 2014Date of Patent: November 4, 2014Assignee: Advanced Technology Materials, Inc.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Publication number: 20140220733Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Applicant: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix