Patents by Inventor William J. Baney
William J. Baney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948786Abstract: A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. One or more MCPs can be releasably secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a rotating ring fixture surrounding an evaporative source of contact metal. Therefore, the rotating platter further rotates so that it orbits around the evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter.Type: GrantFiled: May 24, 2022Date of Patent: April 2, 2024Assignee: Elbit Systems of America, LLCInventors: Stephen Carroll, William J. Baney, Cooper Gray Temple, Matthew Robert Curtis
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Publication number: 20230386810Abstract: A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. One or more MCPs can be releasably secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a rotating ring fixture surrounding an evaporative source of contact metal. Therefore, the rotating platter further rotates so that it orbits around the evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter.Type: ApplicationFiled: May 24, 2022Publication date: November 30, 2023Inventors: Stephen Carroll, William J. Baney, Cooper Gray Temple, Matthew Robert Curtis
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Patent number: 9177764Abstract: An image intensifier tube includes a collimator having multiple channels for receiving electrons from a photocathode layer, and a microchannel plate (MCP) having multiple channels for receiving electrons from the collimator. An ion barrier film (IBF) is disposed on top of an input side of the MCP, in which the IBF includes a small amount of conductive material. The IBF may include alumina doped with chromium oxide, or manganese oxide, or any other conductive material. The small amount of conductive material includes 1% to 5% of conductive material in a layer of non-conductive material.Type: GrantFiled: November 11, 2013Date of Patent: November 3, 2015Assignee: Exelis, Inc.Inventor: William J. Baney
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Patent number: 9153380Abstract: A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.Type: GrantFiled: January 29, 2013Date of Patent: October 6, 2015Assignee: Delphi Technologies, Inc.Inventors: Ralph S. Taylor, John D. Myers, William J. Baney
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Patent number: 8482090Abstract: Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.Type: GrantFiled: July 15, 2010Date of Patent: July 9, 2013Assignee: Exelis, Inc.Inventors: Dan Wesley Chilcott, William J. Baney, John Richard Troxell
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Patent number: 8407871Abstract: A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.Type: GrantFiled: July 6, 2009Date of Patent: April 2, 2013Assignee: Delphi Technologies, Inc.Inventors: Ralph S. Taylor, John D. Myers, William J. Baney
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Publication number: 20120012958Abstract: Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.Type: ApplicationFiled: July 15, 2010Publication date: January 19, 2012Applicant: ITT MANUFACTURING ENTERPRISES, INC.Inventors: DAN WESLEY CHILCOTT, William J. Baney, John Richard Troxell
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Publication number: 20110002081Abstract: A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate.Type: ApplicationFiled: July 6, 2009Publication date: January 6, 2011Applicant: DELPHI TECHNOLOGIES, INC.Inventors: RALPH S. TAYLOR, JOHN D. MYERS, WILLIAM J. BANEY
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Patent number: 7372115Abstract: An MEMS device including a semiconductor substrate having an upper and lower surface, and a support structure disposed at least partially in the semiconductor substrate. The support structure includes a plurality of support members oriented to define a plurality of cells in the semiconductor substrate. A thermally isolated membrane is disposed above the upper surface of the semiconductor substrate and is supported by the support structure. At least one functional component is mounted to the membrane. The plurality of cells are located substantially beneath the at least one functional component.Type: GrantFiled: November 16, 2005Date of Patent: May 13, 2008Assignee: Delphi Technologies, Inc.Inventor: William J. Baney
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Publication number: 20070269959Abstract: A method for fabricating microchip devices is provided. The method includes the steps of providing a first planar substrate, locating at least one first alignment feature in the surface of the first planar substrate, and bonding a second substrate to the surface of the first planar substrate. The method further includes the step of aligning subsequent process operations performed on at least one of the first and second substrates to visible alignment features of the first substrate, wherein the visible alignment features are at least one of the first alignment feature and a visible feature that corresponds to the location of the first alignment feature.Type: ApplicationFiled: May 16, 2006Publication date: November 22, 2007Inventors: John E. Freeman, Steven E. Staller, Troy A. Chase, William J. Baney
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Patent number: 7179668Abstract: A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded to a first side of a handle wafer. After thinning the epitaxial wafer until only the epitaxial layer remains, desired circuitry is formed on a second side of the remaining epitaxial layer, which is opposite the first side of the epitaxial wafer.Type: GrantFiled: April 25, 2005Date of Patent: February 20, 2007Assignee: Delphi Technologies, Inc.Inventors: William J. Baney, Dan W. Chilcott
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Patent number: 7134179Abstract: A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.Type: GrantFiled: December 13, 2004Date of Patent: November 14, 2006Assignee: Delphi Technologies, Inc.Inventors: John E. Freeman, William J. Baney, Timothy M. Betzner, Dan W. Chilcott, John C. Christenson, Timothy A. Vas, George M Queen, Stephen P Long
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Patent number: 7008855Abstract: A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate coating on an outer exposed surface of the material, thereby acting as a barrier to reaction of moisture with the lead of the glass material. A source of reactive phosphate ions is applied to the glass material so as to spontaneously form the desired lead phosphate coating.Type: GrantFiled: September 30, 2004Date of Patent: March 7, 2006Assignee: Delphi Technologies, Inc.Inventors: William J. Baney, Brenda B. Baney, Heather Hude
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Patent number: 6829814Abstract: A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.Type: GrantFiled: August 29, 2002Date of Patent: December 14, 2004Assignee: Delphi Technologies, Inc.Inventors: John E. Freeman, William J. Baney, Timothy M. Betzner, Dan W. Chilcott, John C. Christenson, Timothy A. Vas, George M Queen, Stephen P Long
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Patent number: 6815071Abstract: A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate coating on an outer exposed surface of the material, thereby acting as a barrier to reaction of moisture with the lead of the glass material. A source of reactive phosphate ions is applied to the glass material so as to spontaneously form the desired lead phosphate coating.Type: GrantFiled: January 24, 2003Date of Patent: November 9, 2004Assignee: Delphi Technologies, Inc.Inventors: William J. Baney, Brenda Biser Baney, Heather Hude
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Publication number: 20040146719Abstract: A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate coating on an outer exposed surface of the material, thereby acting as a barrier to reaction of moisture with the lead of the glass material. A source of reactive phosphate ions is applied to the glass material so as to spontaneously form the desired lead phosphate coating.Type: ApplicationFiled: January 24, 2003Publication date: July 29, 2004Applicant: DELPHI TECHNOLOGIES, INCInventors: William J. Baney, Brenda Biser Baney, Heather Hude
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Patent number: 6393914Abstract: An angular accelerometer having a substrate, a fixed electrode supported on the substrate and including a first plurality of fixed capacitive plates, and a ring-shaped rotational inertia mass substantially suspended over a cavity and including a plurality of movable capacitive plates arranged to provide a capacitive coupling with the first plurality of fixed capacitive plates. A central member is fixedly attached to the substrate. A plurality of support arms extend between the central member and the ring-shaped mass for supporting the mass relative to the fixed electrode during rotational movement of the mass. The angular accelerometer also includes an input electrically coupled to the fixed electrode for receiving an input signal, and an output coupled to the mass for providing an output signal which varies as a function of the capacitive coupling and is indicative of angular acceleration.Type: GrantFiled: February 13, 2001Date of Patent: May 28, 2002Assignee: Delphi Technologies, Inc.Inventors: Seyed R. Zarabadi, John C. Christenson, William J. Baney
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Patent number: 5936164Abstract: An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.Type: GrantFiled: August 27, 1997Date of Patent: August 10, 1999Assignee: Delco Electronics CorporationInventors: Douglas Ray Sparks, William J Baney, Steven Edward Staller, Dan Wesley Chilcott, James Werstler Siekkinen
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Patent number: 5706565Abstract: An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.Type: GrantFiled: September 3, 1996Date of Patent: January 13, 1998Assignee: Delco Electronics CorporationInventors: Douglas Ray Sparks, William J. Baney, Steven Edward Staller, Dan Wesley Chilcott, James Werstler Siekkinen