Patents by Inventor William J. Desito

William J. Desito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Highly spin-polarized chromium dioxide thin films prepared by CVD using chromyl chloride precursor
    Patent number: 6613385
    Abstract: An efficient and controllable CVD method deposits a high quality epitaxial CrO2 thin film over a non-magnetic substrate in a process chamber by chemical vapor deposition using a volatile liquid chromium compound such as CrO2Cl2 as a precursor. The method includes: selecting a volatile liquid chromium oxide precursor that decomposes in a heated process chamber to provide a chromium oxide layer on a substrate, placing the volatile liquid chromium oxide precursor in a first bubbler, transporting the volatile liquid chromium oxide precursor vapor with a carrier gas into the heated process chamber having the substrate therein, and growing the chromium oxide layer at a controlled growth rate on the substrate in the heated process chamber.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: September 2, 2003
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: William J. Desito
  • Highly spin-polarized chromium dioxide thin films prepared by CVD using chromyl chloride precursor
    Publication number: 20020155217
    Abstract: An efficient and controllable CVD method deposits a high quality epitaxial CrO2 thin film over a non-magnetic substrate in a process chamber by chemical vapor deposition using a volatile liquid chromium compound such as CrO2Cl2 as a precursor. The method includes: selecting a volatile liquid chromium oxide precursor that decomposes in a heated process chamber to provide a chromium oxide layer on a substrate, placing the volatile liquid chromium oxide precursor in a first bubbler, transporting the volatile liquid chromium oxide precursor vapor with a carrier gas into the heated process chamber having the substrate therein, and growing the chromium oxide layer at a controlled growth rate on the substrate in the heated process chamber.
    Type: Application
    Filed: April 23, 2001
    Publication date: October 24, 2002
    Inventor: William J. Desito