Abstract: A power semiconductor assembly, particularly a semiconductor switch assembly which has a number of discrete emitter connection pads, comprised of a metal matrix composite housing and a copper or aluminum post with a cross-sectional area sufficiently large to carry the rated current providing a single-point, external connection to all emitter pads. The post passes through and is supported by an insulating ceramic insert such as aluminum oxide in the wall of the metal matrix composite housing. The post is hollowed out in the region where it passes through the ceramic insert in order to reduce the mechanical stress between the post and the insulating insert as a result of the mismatch in their thermal expansion coefficients. Buses on either side of the semiconductor die provide surfaces for connection from the post to the discrete emitter connection pads on the die.