Patents by Inventor William J. Keese

William J. Keese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of coating a substrate with a SiC.sub.x film
    Patent number: 5944963
    Abstract: The invention provides a silicon carbide sputtering target comprising non-stoichiometric silicon carbide, SiC.sub.x, where x is the molar ratio of carbon to silicon and x is greater than about 1.1 but less than about 1.45. The sputtering target of this invention is superior to sputtering targets prepared from presently available non-stoichiometric silicon carbide in that the DC magnetron sputtering rate using the new sputtering target is nearly an order of magnitude higher than the rate achievable with presently available targets. The invention also includes processes for making the new sputtering target and preparing superior silicon carbide films by sputtering the target.
    Type: Grant
    Filed: April 7, 1997
    Date of Patent: August 31, 1999
    Assignee: The Carborundum Company
    Inventors: Irving B. Ruppel, William J. Keese