Abstract: A two-stage vaporizer includes two vaporizing stages joined by a vaporization chamber located gravitationally below the first vaporizing stage and gravitationally above the second vaporizing stage. A separator covering an outlet within the vaporization chamber allows vaporized precursor from both vaporizing stages to pass through the outlet to chemical vapor deposition system and prevents any remaining liquid precursor from passing through the outlet. The liquid precursor is premixed with carrier gas just prior to entry into the vaporizer. Additional flows of carrier gas pass through the two vaporizing stages in opposite directions to carry the vaporized precursor to the outlet.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A two-stage vaporizer includes two vaporizing stages joined by a vaporization chamber located gravitationally below the first vaporizing stage and gravitationally above the second vaporizing stage. A separator covering an outlet within the vaporization chamber allows vaporized precursor from both vaporizing stages to pass through the outlet to chemical vapor deposition system and prevents any remaining liquid precursor from passing through the outlet. The liquid precursor is premixed with carrier gas just prior to entry into the vaporizer. Additional flows of carrier gas pass through the two vaporizing stages in opposite directions to carry the vaporized precursor to the outlet.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A system for rapid thermal processing of a substrate in a process chamber while measuring and controlling the temperature at the substrate to establish substantially uniform substrate temperature in real time. The system includes an axisymmetrical multi-zone illuminator having a plurality of substantially concentric rings of heating lamps to direct optical power toward said substrate, a fluid cooled optical reflector facing the substrate frontside and having a relatively high optical reflectivity. The system also includes a multizone temperature measurement system having a plurality of pyrometry sensors coupled to said multi-zone illuminator, a system for real-time measurement and compensation of substrate emissivity and illuminator lamp light interference effects, and a multi-variable temperature controller for providing multi-zone real-time temperature control. The system also incorpotates a plurality of illuminator lamp power supplies.