Patents by Inventor William J. Royea

William J. Royea has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrical passivation of silicon-containing surfaces using organic layers
    Patent number: 8114785
    Abstract: Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical properties of electrical devices. In different embodiments, the organic passivating layer may remain within finished devices to reduce dangling bonds, improve carrier lifetimes, decrease surface recombination velocities, increase electronic efficiencies, or the like. In other embodiments, the organic passivating layer may be used as a protective sacrificial layer and reduce contact resistance or reduce resistance of doped regions. The organic passivation layer may be formed without the need for high-temperature processing.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: February 14, 2012
    Assignee: California Institute of Technology
    Inventors: Nathan S. Lewis, William J. Royea
  • Electrical passivation of silicon-containing surfaces using organic layers
    Patent number: 7564120
    Abstract: Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical properties of electrical devices. In different embodiments, the organic passivating layer may remain within finished devices to reduce dangling bonds, improve carrier lifetimes, decrease surface recombination velocities, increase electronic efficiencies, or the like. In other embodiments, the organic passivating layer may be used as a protective sacrificial layer and reduce contact resistance or reduce resistance of doped regions. The organic passivation layer may be formed without the need for high-temperature processing.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: July 21, 2009
    Assignee: California Institute of Technology
    Inventors: Nathan S. Lewis, William J. Royea