Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: An electron multiplier includes a neutron-sensitive composition having silicon oxide, lead oxide, boron-10 enriched boron oxide, and yttrium oxide. The composition is capable of interacting with neutrons to form an electron cascade. The electron multiplier can be in the form of a microchannel plate, a microfiber plate, or a microsphere plate.

Abstract: An electron multiplier includes a neutron-sensitive composition having silicon oxide, lead oxide, boron-10 enriched boron oxide, and yttrium oxide. The composition is capable of interacting with neutrons to form an electron cascade. The electron multiplier can be in the form of a microchannel plate, a microfiber plate, or a microsphere plate.

Abstract: In some embodiments, an electron multiplier includes a neutron-sensitive composition having, in weight percent, approximately 30% to approximately 60% silicon oxide, approximately 20% to approximately 60% lead oxide, and approximately 1% to approximately 15% boron-10 enriched boron oxide. The composition is capable of interacting with neutrons to form an electron cascade. The electron multiplier can be in the form of a microchannel plate, a microfiber plate, or a microsphere plate.

Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: In some embodiments, an electron multiplier includes a neutron-sensitive composition having, in weight percent, approximately 30% to approximately 60% silicon oxide, approximately 20% to approximately 60% lead oxide, and approximately 1% to approximately 15% boron-10 enriched boron oxide. The composition is capable of interacting with neutrons to form an electron cascade. The electron multiplier can be in the form of a microchannel plate, a microfiber plate, or a microsphere plate.

Abstract: A field emission wafer comprising an array of fused glass fibers, a plurality of fibers having an inner core glass of a bulk conductive glass and a clad glass that surrounds the core glass, the conductivity of the core glass being substantially higher than the clad glass, the core glass of the fibers having an upper portion with an emission tip formed thereon.

Abstract: An etchable core glass composition consisting essentially of the following components present in the glass in the following mole percent ranges is shown:CHART I ______________________________________ CHEMICAL COMPOSITION RANGES mole percent ______________________________________ SiO.sub.2 35-46 B.sub.2 O.sub.3 22-28 BaO + SrO + CaO + ZnO 20-32 Al.sub.2 O.sub.3 + Y.sub.2 O.sub.3 0-3.5 La.sub.2 O.sub.3 + Nd.sub.2 O.sub.3 + Sm.sub.2 O.sub.3 + CeO.sub.2 1-11 As.sub.2 O.sub.3 + Sb.sub.2 O.sub.3 0-1.5 ______________________________________A core glass for manufacturing a microchannel plate made from a glass composition having components in the glass range as defined above is also shown. The core glass has a transformation temperature in range of about 637.degree. C. to about 654.degree. C., a liquidus temperature below 1000.degree. C.

Abstract: A glass composition consisting essentially of the following components present in the glass in the following mole percent ranges is shown:CHART I ______________________________________ CHEMICAL COMPOSITION RANGES mole percent ______________________________________ SiO.sub.2 58-68 Al.sub.2 O.sub.3 0-2 K.sub.2 O + Rb.sub.2 O + Cs.sub.2 O 0-3 PbO 10-15 Bi.sub.2 O.sub.3 0.3-2.1 MgO + CaO + BaO 10-20.4 B.sub.2 O.sub.3 0-4 As.sub.2 O.sub.3 + Sb.sub.2 O 0.1-1.1 ______________________________________A glass composition for manufacturing a high performance microchannel plate is also shown. A microchannel plate made from a glass composition consisting essentially of components in the glass range as defined above is also shown. A method for making a non-porous glass tubing comprising a hollowed out central area and having a transformation temperature in range of about 570.degree. C. to about 610.degree. C., a liquidus temperature below 1000.degree. C.