Abstract: Trace hydrogen may be removed from a dry gas by passing the dry gas at a temperature from about 0° C. to about 60° C. through at least one layer of a first hopcalite catalyst to produce product gas that is at least substantially free of hydrogen, wherein the first hopcalite catalyst has a molar ratio of copper to manganese of more than 0.55. Advantages include increase hydrogen capacity, lower feed and regeneration temperatures and lower sensitivity to carbon dioxide than equivalent processes using standard hopcalite catalyst having a Cu/Mn molar ratio from 0.45 to 0.55.

Abstract: An adsorbent for removing CO2 from a gas mixture, the adsorbent comprising alumina and a carbonate compound where the carbonate to alumina IR absorbance intensity ratio is reduced by washing the adsorbent with water. The disclosure also describes a method of making adsorbent particles, process for removing CO2 from a gas mixture using the adsorbent, and an adsorption unit using the adsorbent.

Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

Abstract: Disclosed are novel, as-crystallized RHO zeolite compositions with improved uniformity in morphology. These RHO compositions are useful for preparing cation-exchanged RHO zeolites that can be used as adsorbents for oxygen and/or nitrogen with improved properties. The adsorbents can be used in pressure swing adsorption processes for selectively adsorbing oxygen and/or nitrogen from feed streams such as an air stream or crude argon stream. Also disclosed are novel methods of preparing RHO zeolites with improved morphology control.

Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract: Disclosed herein are novel RHO zeolites useful as kinetically selective adsorbents for oxygen and/or nitrogen. The adsorbents can be used in pressure swing adsorption processes for selectively adsorbing oxygen and/or nitrogen from feed streams such as an air stream or crude argon stream. Also disclosed are novel methods of preparing RHO zeolites, including in particular mixed-cation RHO zeolites.

Abstract: Disclosed are novel, as-crystallized RHO zeolite compositions with improved uniformity in morphology. These RHO compositions are useful for preparing cation-exchanged RHO zeolites that can be used as adsorbents for oxygen and/or nitrogen with improved properties. The adsorbents can be used in pressure swing adsorption processes for selectively adsorbing oxygen and/or nitrogen from feed streams such as an air stream or crude argon stream. Also disclosed are novel methods of preparing RHO zeolites with improved morphology control.

Abstract: An adsorbent for removing CO2 from a gas mixture, the adsorbent comprising alumina and a carbonate compound where the carbonate to alumina IR absorbance intensity ratio is reduced by washing the adsorbent with water. The disclosure also describes a method of making adsorbent particles, process for removing CO2 from a gas mixture using the adsorbent, and an adsorption unit using the adsorbent.

Abstract: Disclosed herein are new processes for adsorbing oxygen using adsorbent compositions comprising RHO zeolites kinetically selective for oxygen. The RHO zeolites can be used in pressure swing adsorption processes for separating oxygen from oxygen containing streams, such as for, but not limited to, purifying a crude argon feed stream or separating oxygen from an air feed stream.

Abstract: Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants.

Abstract: A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R?NH2, wherein R? is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer species; optionally, a fluoride ion source; and optionally, a metal chelating agent.

Abstract: An adsorbent for removing CO2 from a gas mixture, the adsorbent comprising alumina and a carbonate compound where the carbonate to alumina IR absorbance intensity ratio is reduced by washing the adsorbent with water. The disclosure also describes a method of making adsorbent particles, process for removing CO2 from a gas mixture using the adsorbent, and an adsorption unit using the adsorbent.

Abstract: Disclosed herein are new processes for adsorbing oxygen using adsorbent compositions comprising RHO zeolites kinetically selective for oxygen. The RHO zeolites can be used in pressure swing adsorption processes for separating oxygen from oxygen containing streams, such as for, but not limited to, purifying a crude argon feed stream or separating oxygen from an air feed stream.

Abstract: Disclosed herein are novel RHO zeolites useful as kinetically selective adsorbents for oxygen and/or nitrogen. The adsorbents can be used in pressure swing adsorption processes for selectively adsorbing oxygen and/or nitrogen from feed streams such as an air stream or crude argon stream. Also disclosed are novel methods of preparing RHO zeolites, including in particular mixed-cation RHO zeolites.

Abstract: An adsorbent for removing CO2 from a gas mixture, the adsorbent comprising alumina and a carbonate compound where the carbonate to alumina IR absorbance intensity ratio is reduced by washing the adsorbent with water. The disclosure also describes a method of making adsorbent particles, process for removing CO2 from a gas mixture using the adsorbent, and an adsorption unit using the adsorbent.

Abstract: An adsorbent for removing CO2 from a gas mixture, the adsorbent comprising alumina and a carbonate compound where the carbonate to alumina IR absorbance intensity ratio is reduced by washing the adsorbent with water. The disclosure also describes a method of making adsorbent particles, process for removing CO2 from a gas mixture using the adsorbent, and an adsorption unit using the adsorbent.

Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned micro-electronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.