Abstract: A fuel processor and integrated fuel cell including a monolithic three-dimensional multilayer ceramic carrier structure defining a fuel reformer and including an integrated fuel cell stack. The reformer includes a vaporization zone, a reaction zone including a catalyst, and an integrated heater. The integrated heater is thermally coupled to the reaction zone. The fuel processor further includes an inlet channel for liquid fuel and an outlet channel for hydrogen enriched gas. The fuel processor is formed utilizing multi-layer ceramic technology in which thin ceramic layers are assembled then sintered to provide miniature dimensions in which the encapsulated catalyst converts or reforms inlet fuel into a hydrogen enriched gas.

Abstract: High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface is an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

Abstract: A semiconductor transmission circuit arrangement which utilizes symmetrical transmission transistors and bias circuitry which exhibits a high output impedance and is arranged to maintain equal d.c. bias currents in the base and the emitter/collectors of the transmission transistor. A multiple collector transistor is utilized as a primary current source and a current mirror circuit is used as a control arrangement.