Abstract: A method for dicing a wafer is disclosed. One illustrative method includes forming a layer of frozen material above a plurality of integrated circuit dies on a substrate and performing a cutting process to cut through the layer of frozen material and the substrate to singulate the plurality of dies. Another method includes performing a cutting process to singulate a plurality of integrated circuit dies having a layer of frozen material formed above the plurality of dies.

Abstract: A method and system for dicing a wafer is disclosed. One illustrative method includes forming a layer of frozen material above a plurality of integrated circuit die on a substrate and performing a cutting process to cut through the layer of frozen material and the substrate to singulate the plurality of die. Another method includes performing a cutting process to singulate a plurality of integrated circuit die having a layer of frozen material formed above the plurality of die. One illustrative system comprises a substrate having a plurality of integrated circuit die, a cooled layer of material attached to the substrate and a dicing saw for singulating the plurality of die. Another illustrative system comprises a semiconducting substrate comprising a backside and a plurality of integrated circuit die, a layer of material attached to the backside of the substrate, the layer of material being at a temperature of 10° C. or less and a dicing saw for singulating the plurality of die.