Abstract: A semiconductor substrate such as a wafer includes a scoring that is inset from the perimeter. The scoring follows the perimeter or a portion thereof. The scoring may take the form of a groove or a trench on one or more surfaces of the wafer, a void or a lattice defect in the interior of the wafer, a series of perforations, or a combination thereof. A groove may be formed by dicing/sawing. A trench or series of perforations may be formed via etching or ablation. Voids or lattice defects may be introduced by laser treatment or ion bombardment.