Patents by Inventor William L. Benard

William L. Benard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and sensor for detecting strain using shape memory alloys
    Patent number: 6622558
    Abstract: A method and sensor for detecting strain using shape memory alloys is disclosed. The sensor comprises a substrate material, a flexible diaphragm provided on the substrate material and a thin film SMA material deposited on the flexible diaphragm. The thin film SMA material is capable of undergoing a phase transformation in response to a physical stimulus being applied thereto. During such a phase transformation, a change occurs in the electrical resistance of the thin film SMA material. By measuring the value of the electrical resistance of the thin film SMA material immediately before and after the thin film SMA material undergoes a phase transformation, the difference in the value of the electrical resistance can be determined and utilized to determine the magnitude of the physical stimulus that was applied to the thin film SMA material causing it to undergo a phase transformation.
    Type: Grant
    Filed: November 30, 2000
    Date of Patent: September 23, 2003
    Assignee: Orbital Research Inc.
    Inventors: Michael A. Huff, William L. Benard, Frederick J. Lisy, Troy S. Prince
  • Method and sensor for detecting strain using shape memory alloys
    Publication number: 20020062692
    Abstract: A method and sensor for detecting strain using shape memory alloys is disclosed. The sensor comprises a substrate material, a flexible diaphragm provided on the substrate material and a thin film SMA material deposited on the flexible diaphragm. The thin film SMA material is capable of undergoing a phase transformation in response to a physical stimulus being applied thereto. During such a phase transformation, a change occurs in the electrical resistance of the thin film SMA material. By measuring the value of the electrical resistance of the thin film SMA material immediately before and after the thin film SMA material undergoes a phase transformation, the difference in the value of the electrical resistance can be determined and utilized to determine the magnitude of the physical stimulus that was applied to the thin film SMA material causing it to undergo a phase transformation.
    Type: Application
    Filed: November 30, 2000
    Publication date: May 30, 2002
    Applicant: Orbital Research Inc.
    Inventors: Michael A. Huff, William L. Benard, Frederick J. Lisy, Troy S. Prince