Abstract: A reduced-area, read-only memory, including a programmable read-only memory, accomplished with a first step of removing one word address line from the word decoder input and one bit address line from the bit decoder input. The number of decoder output lines is thus cut in half. Adjacent line-driving transistors are driven by the same decoder output line. The removed word decoder input, and its complement, drive auxiliary bit lines; the removed bit decoder input and its complement drive auxiliary word lines. Circuitry connected at crossovers of word lines with auxiliary bit lines and bit lines with auxiliary word lines selectively suppress the selection of one line of each pair of lines that is driven by a single decoder output. The invention is particularly effective when utilized with Schottky diodes insulated from the semiconductor substrate. In the memory cells the Schottky diodes can be connected in series with voltage-programmable resistors to provide a reduced-area, programmable, read-only memory.