Abstract: The present disclosure provides new beverages and methods of making said beverages from hemp juice, coffee fruit, and oranges. The present disclosure also provides new beverages and methods of making said beverages from hemp juice and coffee fruit juice.

Abstract: Embodiments provide a system where a user can obtain a fractional portion of a blockchain unit. The fractional portion can be obtained as part of a separate arrangement. A computer ledger tracks the fractional interests of multiple users. An aggregator computer communicates with a blockchain computer to record ownership of one or more whole units in a pool. In one embodiment, a concierge system is provided that supports a social equity economy.

Abstract: The present disclosure provides new beverages and methods of making said beverages from hemp juice, coffee fruit, and oranges. The present disclosure also provides new beverages and methods of making said beverages from hemp juice and coffee fruit juice. The disclosure further relates to the production of a non-water-soluble and water-soluble coffee fruit, hemp juice, and orange powders.

Abstract: A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.

Abstract: An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.

Abstract: A system and method comprises depositing a dielectric layer on a substrate and depositing a metal layer on the dielectric layer. The system and method further includes depositing a high temperature diffusion barrier metal cap on the metal layer. The system and method further includes depositing a second dielectric layer on the high temperature diffusion barrier metal cap and the first dielectric layer, and etching a via into the second dielectric layer, such that the high temperature diffusion barrier metal cap is exposed. The system and method further includes depositing an under bump metallurgy in the via, and forming a C4 ball on the under bump metallurgy layer.

Abstract: A semiconductor having an insulating layer, a contact pad, a via, and a sacrificial dielectric cap is provided. The contact pad is embedded in the insulating layer, where the contact pad has a top metal layer of copper. The via creates an opening over the top metal layer. The sacrificial dielectric cap is over at least the top metal layer.

Abstract: An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.

Abstract: An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%-10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.

Abstract: A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting-the bond pads to the Ni/Au pad metallization.