Patents by Inventor William Larson
William Larson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250375158Abstract: A garment can include a pocket to hold a removable electronic device. The electronic device can sense body core temperature, heart rate, skin conductivity, blood oxygen level, and geo-spatial location of the wearer, and transmit this data wirelessly to a mapping application. A viewer of the application can track the location and the health status of the wearer. A leader at a search and rescue command post can easily monitor both the location and well-being of personnel through the mapping application while they are on a mission. An algorithm on the backend can determine a health status color based on the sensor data. The pocket design facilitates insertion and removal of the electronics, and ensures that sensors are positioned at optimal locations on the body.Type: ApplicationFiled: June 10, 2025Publication date: December 11, 2025Inventors: Kouta Ueki, Aubin Kevrekidis, William Larson, James Hall, Elizabeth Guider Smith, Mihir Shenoy, Yatharth Rajakumar, Cameron Baird, Parmida Arghavani, Rymas Aladmawy, Max Costa, Yoh Morita, Cynthia Tian, John A. Fabel, Sam Woodruff, Rowan G. Reichard, Alex Lagrant, Olivia Hansen Fisher, Kieran Palmer, Evelyn Ross
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Publication number: 20250263604Abstract: A cracking furnace for cracking a hydrocarbon feed, the furnace including a firebox having a single radiant zone including, a first plurality of cracking coils each having a first shape arranged within the firebox. The radiant zone includes a second plurality of cracking coils each having a second shape arranged within the radiant zone. A burner section positioned below the first plurality cracking coils and below the second plurality of cracking coils. A convection section is positioned on top of the firebox configured to recover residual heat from the firebox.Type: ApplicationFiled: April 21, 2025Publication date: August 21, 2025Applicant: T.EN Process Technology, Inc.Inventors: Astrid Han, Huynh Pham, George Dabney, JR., John Murphey, III, William Larson, Chinh Dang, Thomas M. Pickett, Yong Wang
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Patent number: 12281269Abstract: A cracking furnace for cracking a hydrocarbon feed, the furnace including a firebox having a single radiant zone including, a first plurality of cracking coils each having a first shape arranged within the firebox. The radiant zone includes a second plurality of cracking coils each having a second shape arranged within the radiant zone. A burner section positioned below the first plurality cracking coils and below the second plurality of cracking coils. A convection section is positioned on top of the firebox configured to recover residual heat from the firebox.Type: GrantFiled: October 15, 2020Date of Patent: April 22, 2025Assignee: T.EN PROCESS TECHNOLOGY, INC.Inventors: Thomas M. Pickett, Yong Wang, Chinh Dang, William Larson, John Murphey, III, George Dabney, Jr., Huynh Pham, Astrid Han
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Publication number: 20220119716Abstract: A cracking furnace for cracking a hydrocarbon feed, the furnace including a firebox having a single radiant zone including, a first plurality of cracking coils each having a first shape arranged within the firebox. The radiant zone includes a second plurality of cracking coils each having a second shape arranged within the radiant zone. A burner section positioned below the first plurality cracking coils and below the second plurality of cracking coils. A convection section is positioned on top of the firebox configured to recover residual heat from the firebox.Type: ApplicationFiled: October 15, 2020Publication date: April 21, 2022Applicant: Technip Process Technology, Inc.Inventors: Thomas M. Pickett, Yong Wang, Chinh Dang, William Larson, John Murphey, III, George Dabney, JR., Huynh Pham, Astrid Han
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Patent number: 9818742Abstract: An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second semiconductor devices each include a gate region and at least one active region. A first channel stop region is configured to surround the first semiconductor device. A second channel stop region is configured to surround the second semiconductor device. A first field plate is located above at least part of the first channel stop region, and overlaps the gate region of the first semiconductor device in a first overlap region. A second field plate is located above at least part of the second channel stop region, and overlaps the gate region of the second semiconductor device in a second overlap region.Type: GrantFiled: May 11, 2012Date of Patent: November 14, 2017Assignee: POLAR SEMICONDUCTOR, LLCInventor: William Larson
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Publication number: 20160037586Abstract: An induction heating apparatus includes a susceptor defining a reaction chamber. A housing is spaced from the susceptor opposite the reaction chamber and defines a port. A void space is defined between the housing and the susceptor. An induction coil extends through the port and is disposed within the void space for conducting an electric current to heat the susceptor to heat the reaction chamber. A flange comprises a metal material and is coupled to the housing at the port for sealing the port with the induction coil extending through the flange. An isolator is disposed between the flange and the housing to prevent the electric current from passing into the housing.Type: ApplicationFiled: March 10, 2014Publication date: February 4, 2016Inventors: Timothy Armstrong, Matthew Deeg, Jennifer Larimer, William Larson, Keith McCoy, Michael John Molnar, James A. Schultz
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Publication number: 20150232987Abstract: A manufacturing apparatus deposits material on a carrier body. The manufacturing apparatus includes a housing defining a chamber. The housing defines an inlet for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber. The housing also defines an outlet through the housing for exhausting the deposition composition from the chamber. An electrode is disposed through the housing with the electrode at least partially disposed within the chamber. A socket has an exterior surface and is connected to the electrode within the chamber for receiving the carrier body. A release coating is disposed on the exterior surface of the socket for promoting separation of the socket from the carrier body, and the material deposited thereon, to harvest the carrier body.Type: ApplicationFiled: July 9, 2013Publication date: August 20, 2015Inventors: Matthew Deeg, David Hillabrand, William Larson
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Publication number: 20130299911Abstract: An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second semiconductor devices each include a gate region and at least one active region. A first channel stop region is configured to surround the first semiconductor device. A second channel stop region is configured to surround the second semiconductor device. A first field plate is located above at least part of the first channel stop region, and overlaps the gate region of the first semiconductor device in a first overlap region. A second field plate is located above at least part of the second channel stop region, and overlaps the gate region of the second semiconductor device in a second overlap region.Type: ApplicationFiled: May 11, 2012Publication date: November 14, 2013Applicant: POLAR SEMICONDUCTOR, INC.Inventor: William Larson
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Patent number: 8536659Abstract: A channel stop is provided for a semiconductor device that includes at least one active region. The channel stop is configured to surround the semiconductor device, to abut the at least one active region at a periphery of the semiconductor device, and to share an electrical connection with the at least one active region.Type: GrantFiled: July 30, 2009Date of Patent: September 17, 2013Assignee: Polar Seminconductor, Inc.Inventors: William Larson, Gregory Michaelson
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Publication number: 20120053383Abstract: The present invention is directed to a method for producing, inter alia, olefins from refinery saturated and unsaturated off-gas. Furthermore, said refinery streams are not required to undergo deoxygenation reaction in a separate reactor system provided they are fed to the pyrolysis furnace. The refinery off-gases are treated to produce olefins such as ethylene and propylene. Gases from petrochemical facilities, gas separation plants and similar facilities that produce light gases containing ethane and propane are useful in the present method.Type: ApplicationFiled: August 25, 2011Publication date: March 1, 2012Applicant: Stone & Webster Process Technology, Inc.Inventors: Wadie MALATY, Richard H. McCue, David J. Brown, William Larson
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Publication number: 20110024803Abstract: A channel stop is provided for a semiconductor device that includes at least one active region. The channel stop is configured to surround the semiconductor device, to abut the at least one active region at a periphery of the semiconductor device, and to share an electrical connection with the at least one active region.Type: ApplicationFiled: July 30, 2009Publication date: February 3, 2011Applicant: POLAR SEMICONDUCTOR, INC.Inventors: William Larson, Gregory Michaelson
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Publication number: 20070279971Abstract: A pseudo-spin valve for memory applications, such as magnetoresistive random access memory (MRAM), and methods for fabricating the same, are disclosed. Advantageously, memory devices with the advantageous pseudo-spin valve configuration can be fabricated without cobalt-iron and without anti-ferromagnetic layers, thereby promoting switching repeatability.Type: ApplicationFiled: September 27, 2006Publication date: December 6, 2007Applicant: MICRON TECHNOLOGY, INC.Inventors: Timothy Vogt, Romney Katti, Dan Schipper, Theodore Zhu, Anthony Arrott, Joel Drewes, Harry Liu, William Larson
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Patent number: 7029923Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.Type: GrantFiled: December 11, 2003Date of Patent: April 18, 2006Assignee: Micron Technology, Inc.Inventors: Harry Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti, Yong Lu, Anthony Arrott
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Patent number: 6872997Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.Type: GrantFiled: January 26, 2004Date of Patent: March 29, 2005Assignee: Micron Technology, Inc.Inventors: Harry Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti, Yong Lu, Anthony Arrott
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Publication number: 20050016046Abstract: The present invention provides frame assembly devices for attachment to a commercially available picture frame that allows for the quick and easy insertion or removal of an item of display in the picture frame. The present invention also provides a method for adapting an assembled commercially available picture frame to allow display materials to be quickly and easily inserted and removed from the picture frame.Type: ApplicationFiled: July 23, 2003Publication date: January 27, 2005Inventor: William Larson
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Patent number: 6822295Abstract: A device and method of manufacture for a low capacitance overvoltage protection device. This is accomplished through the use of PiN diodes to shunt overvoltage away from internal circuit elements. PiN diodes are useful because they exhibit a low capacitance in reverse bias mode. Radio frequency integrated circuits and other integrated circuits operated at high frequency are sensitive to capacitance. This invention protects against circuit damage due to overvoltage events while keeping capacitance low through the use of PiN diodes.Type: GrantFiled: July 30, 2002Date of Patent: November 23, 2004Assignee: Honeywell International Inc.Inventor: William Larson
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Publication number: 20040155307Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.Type: ApplicationFiled: January 26, 2004Publication date: August 12, 2004Inventors: Harry Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti, Yong Lu, Anthony Arrott
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Publication number: 20040126709Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.Type: ApplicationFiled: December 11, 2003Publication date: July 1, 2004Inventors: Harry Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti, Yong Lu, Anthony Arrott
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Patent number: 6717194Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.Type: GrantFiled: October 30, 2001Date of Patent: April 6, 2004Assignee: Micron Technology, Inc.Inventors: Harry Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti, Yong Lu, Anthony Arrott
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Publication number: 20040021178Abstract: A device and method of manufacture for a low capacitance overvoltage protection device. This is accomplished through the use of PiN diodes to shunt overvoltage away from internal circuit elements. PiN diodes are useful because they exhibit a low capacitance in reverse bias mode. Radio frequency integrated circuits and other integrated circuits operated at high frequency are sensitive to capacitance. This invention protects against circuit damage due to overvoltage events while keeping capacitance low through the use of PiN diodes.Type: ApplicationFiled: July 30, 2002Publication date: February 5, 2004Inventor: William Larson