Abstract: In one aspect, a Schottky diode includes a semiconductor material, and a metal material forming a Schottky barrier junction with the semiconductor material, wherein a cavity having a lateral dimension of at least 200 nm is adjacent to the Schottky barrier junction. In another aspect, a Schottky diode includes a semiconductor surface, a dielectric structure, and a contact structure. The dielectric structure defines an opening to the semiconductor surface. The contact structure extends through the opening in the dielectric structure to form a Schottky barrier junction with the semiconductor surface. The contact structure comprises a bonding pad overlying the Schottky barrier junction and at least a portion of the dielectric structure and being electrically connected to the Schottky barrier junction.