Abstract: A silicide bridged anti-fuse and a method of forming the anti-fuse are disclosed. The silicide bridged anti-fuse can be formed with a tungsten plug metalization process that does not require any additional process steps. As a result, anti-fuses can be added to an electrical circuit as trim elements for no additional cost.

Abstract: A system and method is disclosed for selectively increasing a wet etch rate of a large raised area portion of a semiconductor wafer with respect to a wet etch rate of a small raised area portion of the semiconductor wafer. A resist mask on the semiconductor wafer is etched to create a large via over the large raised area portion and a small via over the small raised area portion. An ion implantation beam is applied with an impact direction that enables ions to pass through the large via but does not enable ions to pass through the small via. The ions that pass through the large via increase the wet etch rate of the underlying portion of the semiconductor wafer. In one embodiment the impact direction has a tilt angle of forty five degrees and a rotation angle of forty five degrees.

Abstract: A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming a plurality of trenches between the first and second regions, implanting a dopant into the bottom surfaces of the trenches, and then annealing the wafer to cause the dopant at the bottom surfaces to diffuse and form a continuous conductive path.

Abstract: A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming one or more trenches between the first and second regions, and implanting a dopant into the bottom surfaces of the trenches to form a continuous conductive path.

Abstract: A silicide bridged anti-fuse and a method of forming the anti-fuse are disclosed. The silicide bridged anti-fuse can be formed with a tungsten plug metalization process that does not require any additional process steps. As a result, anti-fuses can be added to an electrical circuit as trim elements for no additional cost.

Abstract: A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming one or more trenches between the first and second regions, and implanting a dopant into the bottom surfaces of the trenches to form a continuous conductive path.

Abstract: A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming a plurality of trenches between the first and second regions, implanting a dopant into the bottom surfaces of the trenches, and then annealing the wafer to cause the dopant at the bottom surfaces to diffuse and form a continuous conductive path.

Abstract: The present invention provides a two-terminal Zener zap diode device structure that relies upon the formation of an anti-fuse through a silicon substrate with the melting and flow of an aluminum alloy to create the current path. The use of oversized contacts in the diode structure permits the Tungsten plug to be eliminated from the diode structure and, thus, permits an aluminum alloy melt and flow mechanism to be used with a Tungsten plug process.

Abstract: A three-terminal integrated circuit device structure is provided that relies upon the formation of an anti-fuse through a silicon substrate with the melting and flowing of an aluminum/aluminum alloy to create the current path. The use of an oversized contact permits the Tungsten plug to be eliminated from the anti-fuse structure, but allows the aluminum melt and flow mechanism to be used with a Tungsten plug process.

Abstract: A triac (100) utilizes an FET (107) to inhibit firing of a transistor (112) that forms a portion of the SCR of the triac (100). A DMOS transistor (106) is used to supply a substantially constant bias current to the transistor (107) in order to facilitate rapid turn-on of the transistor (107) around the zero-crossing of the voltage applied to the triac (100).