Patents by Inventor William M. Denty, Jr.
William M. Denty, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9234775Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.Type: GrantFiled: October 3, 2013Date of Patent: January 12, 2016Assignee: LAM RESEARCH CORPORATIONInventors: Dean J. Larson, Robert C. Hefty, James V. Tietz, William S. Kennedy, Eric H. Lenz, William M. Denty, Jr., Enrico Magni
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Patent number: 9093483Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: GrantFiled: March 5, 2014Date of Patent: July 28, 2015Assignee: Lam Research CorporationInventors: Jason Augustino, Anthony de la Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Patent number: 8801892Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: GrantFiled: March 25, 2008Date of Patent: August 12, 2014Assignee: Lam Research CorporationInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Jr., Peter Loewenhardt
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Publication number: 20140187049Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: ApplicationFiled: March 5, 2014Publication date: July 3, 2014Applicant: Lam Research CorporationInventors: Jason Augustino, Anthony de la Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, JR.
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Patent number: 8709202Abstract: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.Type: GrantFiled: December 14, 2010Date of Patent: April 29, 2014Assignee: Lam Research CorporationInventors: Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Jason Augustino, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Patent number: 8702866Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: GrantFiled: December 18, 2006Date of Patent: April 22, 2014Assignee: Lam Research CorporationInventors: Jason Augustino, Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Publication number: 20140033828Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.Type: ApplicationFiled: October 3, 2013Publication date: February 6, 2014Applicant: Lam Research CorporationInventors: Dean J. Larson, Robert C. Hefty, James V. Tietz, William S. Kennedy, Eric H. Lenz, William M. Denty, JR., Enrico Magni
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Publication number: 20110086513Abstract: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.Type: ApplicationFiled: December 14, 2010Publication date: April 14, 2011Applicant: Lam Research CorporationInventors: Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Jason Augustino, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, JR.
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Patent number: 7854820Abstract: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.Type: GrantFiled: December 15, 2006Date of Patent: December 21, 2010Assignee: Lam Research CorporationInventors: Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Jason Augustino, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Patent number: 7371332Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: GrantFiled: August 14, 2003Date of Patent: May 13, 2008Assignee: LAM Research CorporationInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Jr., Peter Loewenhardt
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Patent number: 7169231Abstract: An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.Type: GrantFiled: December 13, 2002Date of Patent: January 30, 2007Assignee: Lam Research CorporationInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Jr., Peter Loewenhardt
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Patent number: 6277237Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.Type: GrantFiled: November 14, 2000Date of Patent: August 21, 2001Assignee: Lam Research CorporationInventors: Alan M. Schoepp, William M. Denty, Jr., Michael Barnes
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Patent number: 6170429Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.Type: GrantFiled: September 30, 1998Date of Patent: January 9, 2001Assignee: Lam Research CorporationInventors: Alan M. Schoepp, William M. Denty, Jr., Michael Barnes