Abstract: A plasma generating system. A pair of electrodes are spaced apart by an electrode gap. A source of a gas adapted to place the gas in the electrode gap. A power generating circuit is coupled to the electrodes to generate an electric field across the electrodes so as to initiate a plasma discharge within the electrode gap. The power generating circuit has adequate capacity to maintain a sufficient electric field across the gap during the plasma discharge to allow a plasma impedance to self-tune to the plasma generating system. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: A plasma generating system. A pair of electrodes are spaced apart by an electrode gap. A source of a gas adapted to place the gas in the electrode gap. A power generating circuit is coupled to the electrodes to generate an electric field across the electrodes so as to initiate a plasma discharge within the electrode gap. The power generating circuit has adequate capacity to maintain a sufficient electric field across the gap during the plasma discharge to allow a plasma impedance to self-tune to the plasma generating system. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: A plasma system is disclosed comprising a vessel suitable for containing a plasma at a pressure of at least about 100 mtorr, a plasma gas in the vessel at a pressure of at least 100 mtorr, an antenna with a substantially planar face positioned adjacent a portion of the vessel for applying an electromagnetic field to the plasma gas to thereby generate and maintain a plasma, and means for applying an external magnetic field to the plasma gas other than the field generated by the antenna, and having a component in a direction substantially perpendicular to the planar face of the antenna.

Abstract: A method for plasma processing includes using a relatively high magnetic field and a relatively high pressure to create a first plasma region adjacent a window of a processing chamber having a lower radiation absorption and a second plasma region adjacent a substrate holder having a higher radiation absorption. Accordingly, a cooler plasma region is created adjacent the window to prevent contaminants from being etched from the window and adjacent chamber surface, and hotter plasma region is created adjacent the substrate to increase the processing rate. Additionally, the relatively high pressure of the processing gas, preferably greater than about 10 Torr and more preferably greater than about 100 Torr, increases the density of the plasma thereby increasing the processing rate. Alternatively, a high magnetic field and a high pressure create a radiation absorption region which is on the order of centimeters thick, for example 5-10 centimeters thick.

Abstract: A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate.

Abstract: Electromagnetic (E.M.) energy injection method and apparatus for producing and sustaining suprathermal ordered ions in a neutral, two-ion-species, toroidal, bulk equilibrium plasma. More particularly, the ions are produced and sustained in an ordered suprathermal state of existence above the average energy and velocity of the bulk equilibrium plasma by resonant rf energy injection in resonance with the natural frequency of one of the ion species. In one embodiment, the electromagnetic energy is injected to clamp the energy and velocity of one of the ion species so that the ion energy is increased, sustained, prolonged and continued in a suprathermal ordered state of existence containing appreciable stored energy that counteracts the slowing down effects of the bulk equilibrium plasma drag. Thus, selective deuteron absorption may be used for ion-tail creation by radio-frequency excitation alone.