Abstract: An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

Abstract: An intensified charge coupled image sensor comprises an image intensifier tube including an evacuated envelope having therein a photoemissive cathode, a charge coupled device spaced from said cathode, and a frame member for supporting the charge coupled device. The charge coupled device has a first surface and a second surface with a conductive boundary on the first surface. The frame member has a coefficient of expansion closely matching that of the charge coupled device and a first and second surface with a conductive pattern formed on one of the surfaces. The conductive boundary of the CCD and the conductive pattern of the frame member are in register and bonded together by a braze material to form a unitized structure of superior strength. The method of forming the conductive boundary and the conductive pattern is described as is the brazing method.

Abstract: An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

Abstract: An imaging device such as silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included for controlling the blooming within the sensing region, and a passivation layer is provided for stabilizing the blooming characteristics. A coating, preferably zirconium oxide, is deposited on the passivation layer to combine with the passivation layer to form an anti-reflection region for enhancing the quantum efficiency of the device. The anti-reflection region has an optical thickness substantially equal to an odd multiple of a quarter of a wavelength of light incident on the device.