Patents by Inventor William M. Moller

William M. Moller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit with metal silicide regions
    Patent number: 7800226
    Abstract: A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the silicide layer and the underlying silicon region.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: September 21, 2010
    Assignee: Agere Systems Inc.
    Inventors: Yuanning Chen, Maxwell Walthour Lippitt, III, William M. Moller
  • Method for forming metal silicide regions in an integrated circuit
    Patent number: 7250356
    Abstract: A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the silicide layer and the underlying silicon region.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: July 31, 2007
    Assignee: Agere Systems Inc.
    Inventors: Yuanning Chen, Maxwell Walthour Lippitt, III, William M. Moller
  • Method for forming metal silicide regions in an integrated circuit
    Publication number: 20040053485
    Abstract: A method for forming a metal suicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the suicide layer and the underlying silicon region.
    Type: Application
    Filed: September 17, 2002
    Publication date: March 18, 2004
    Inventors: Yuanning Chen, Maxwell Walthour Lippitt, William M. Moller