Abstract: An end effector assembly includes a clevis having first and second spaced-apart arms, a ceiling, a floor, pivot and cam pins extending between the arms, and first and second jaw members. Each jaw member includes a proximal portion and a distal body extending distally from the clevis. The proximal portion of the first jaw member includes a first flag disposed between the first and second arms of the clevis, operably coupled to both the pivot pin and the cam pin, extending vertically at least partially through openings defined within the ceiling and floor. The proximal portion of the second jaw member includes second and third flags disposed between the first and second arms of the clevis in spaced-apart relative to one another and between the ceiling and the floor. The second and third flags are fixedly engaged to the clevis.

Abstract: A robotic surgical instrument includes a housing, a shaft assembly extending distally from the housing, and an end effector assembly. The shaft assembly has a proximal segment coupled to the housing, a clevis supporting the end effector assembly, and at least one articulating link pivotably coupled to and interconnecting the proximal segment and the clevis such that the end effector assembly is configured to articulate relative to the proximal segment via the at least one articulating link in at least two directions.

Abstract: A method of forming a plurality of interconnected metal oxide semiconductor field effect transistors on P-type semiconductor substrate (10). A layer of oxide (14) is formed on the substrate (10) and then a polysilicon layer (16) is formed on top of the oxide layer (14). A layer of silicon nitride (18) is deposited on top of the polysilicon layer (16). The silicon nitride layer (18), polysilicon layer (16) and oxide layer (14) are selectively etched to form a conductor pattern. The conductor pattern defines a gate electrode and a plurality of interconnecting lines (42) that interconnect transistors to each other and to the peripheral circuits that drive the transistors. The source and drain regions (26 and 28) are ion implanted with arsenic ions. The exposed sidewalls of the polysilicon layer (16) are oxidized lateral and subjacent to the silicon nitride layer (18).