Patents by Inventor William McGehee

William McGehee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chip-scale atomic beam generating systems
    Patent number: 12602016
    Abstract: An exemplary embodiment of the present disclosure provides a chip-scale atomic beam system comprising an atomic vapor source, a plurality of channels, and a propagation chamber. The atomic vapor source chamber can comprise an atomic vapor source configured to emit an atomic vapor. The plurality of channels can have first ends and second ends. The first ends can be in fluid communication with the atomic vapor source chamber. The plurality of channels can be configured to collimate the atomic vapor as it moves through the plurality of channels from the first ends to the second ends. The propagation chamber can be in fluid communication with the second ends of the plurality of channels. The propagation chamber can have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the collimated atomic vapor to propagate through the propagation chamber.
    Type: Grant
    Filed: January 24, 2023
    Date of Patent: April 14, 2026
    Assignees: Georgia Tech Research Corporation, National Institute of Standards and Technology
    Inventors: Chandra Raman, Elizabeth Donley, John Kitching, Chao Li, Gabriela Martinez, William McGehee
  • Chip-scale atomic beam generating systems
    Patent number: 12578688
    Abstract: An exemplary embodiment of the present disclosure provides a chip-scale atomic beam system comprising an atomic vapor source, a plurality of channels, and a propagation chamber. The atomic vapor source chamber can comprise an atomic vapor source configured to emit an atomic vapor. The plurality of channels can have first ends and second ends. The first ends can be in fluid communication with the atomic vapor source chamber. The plurality of channels can be configured to collimate the atomic vapor as it moves through the plurality of channels from the first ends to the second ends. The propagation chamber can be in fluid communication with the second ends of the plurality of channels. The propagation chamber can have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the collimated atomic vapor to propagate through the propagation chamber.
    Type: Grant
    Filed: January 24, 2023
    Date of Patent: March 17, 2026
    Assignees: Georgia Tech Research Corporation, National Institute of Standards and Technology
    Inventors: Chandra Raman, Elizabeth Donley, John Kitching, Chao Li, Gabriela Martinez, William McGehee
  • Chip-Scale Atomic Beam Generating Systems
    Publication number: 20250103010
    Abstract: An exemplary embodiment of the present disclosure provides a chip-scale atomic beam system comprising an atomic vapor source, a plurality of channels, and a propagation chamber. The atomic vapor source chamber can comprise an atomic vapor source configured to emit an atomic vapor. The plurality of channels can have first ends and second ends. The first ends can be in fluid communication with the atomic vapor source chamber. The plurality of channels can be configured to collimate the atomic vapor as it moves through the plurality of channels from the first ends to the second ends. The propagation chamber can be in fluid communication with the second ends of the plurality of channels. The propagation chamber can have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the collimated atomic vapor to propagate through the propagation chamber.
    Type: Application
    Filed: January 24, 2023
    Publication date: March 27, 2025
    Inventors: Chandra Raman, Elizabeth Donley, John Kitching, Chao Li, Gabriela Martinez, William McGehee