Abstract: An EUV light source device is described herein which may comprise a laser beam travelling along a beam path, at least a portion of the beam path aligned along a linear axis; a material for interaction with the laser beam at an irradiation site to create an EUV light emitting plasma; a first reflector having a focal point, the first reflector positioned with the focal point on the linear axis, the first reflector receiving laser light along the beam path; and a second reflector receiving laser light reflected by the first reflector and directing the laser light toward the irradiation site.

Abstract: A method and apparatus for compensating for thermal effects on the focal spot of a lens used to focus a laser beam on a target material at an irradiation site in a laser produced plasma (LPP) extreme ultraviolet (EUV) light system is disclosed. The EUV energy output of the light system is measured at sample intervals as a proxy for the laser power. The thermal load on the focusing lens is estimated from the measured EUV power, the expected change in the focal length of the lens for the thermal load is calculated, and the lens position is adjusted to compensate for the calculated focal length change. The actual position of the lens may be determined and compared to its desired position, and adjusted to insure that it remains in the desired position.

Abstract: A device is disclosed herein which may comprise a chamber, a source providing a stream of target material droplets delivering target material to an irradiation region in the chamber along a path between a target material release point and the irradiation region, a gas flow in the chamber, at least a portion of the gas flowing in a direction toward the droplet stream, a system producing a laser beam irradiating droplets at the irradiation region to generate a plasma producing EUV radiation, and a shroud positioned along a portion of said stream, said shroud having a first shroud portion shielding droplets from said flow and an opposed open portion.

Abstract: An extreme-ultraviolet (EUV) light source is described herein comprising an optic; a primary EUV light radiator generating an EUV light emitting plasma and producing a deposit on said optic; and a cleaning system comprising a gas and a secondary light radiator, the secondary light radiator generating a laser produced plasma and producing a cleaning species with the gas.

Abstract: A method and apparatus is disclosed for operating a laser output light beam pulse line narrowing mechanism that may comprise a nominal center wavelength and bandwidth selection optic; a static wavefront compensation mechanism shaping the curvature of the selection optic; an active wavefront compensation mechanism shaping the curvature of the selection optic and operating independently of the static wavefront compensation mechanism. The method and apparatus may comprise the nominal center wavelength and bandwidth selection optic comprises a grating; the static wavefront compensation mechanism applies a pre-selected bending moment to the grating; the active wavefront compensation mechanism applies a separate selected bending moment to the grating responsive to the control of a bending moment controller based on bandwidth feedback from a bandwidth monitor monitoring the bandwidth of the laser output light beam pulses. The active wavefront compensation mechanism may comprise a pneumatic drive mechanism.

Abstract: An EUV lithographic apparatus includes a source collector apparatus in which the extreme ultraviolet radiation is generated by exciting a fuel to provide a plasma emitting the radiation. The source collector apparatus includes a chamber in fluid communication with a guide way external to the chamber. A pump for circulating buffer gas is part of the guide way, and provides a closed loop buffer gas flow. The gas flowing through the guide way traverses a gas decomposer wherein a compound of fuel material and buffer gas material is decomposed, so that decomposed buffer gas material can be fed back into the closed loop flow path.

Abstract: An extreme ultraviolet light system includes a drive laser system that produces an amplified light beam; a target material delivery system configured to produce a target material at a target location; an extreme ultraviolet light vacuum chamber defining an interior vacuum space that houses an extreme ultraviolet light collector and the target location; and a beam delivery system that is configured to receive the amplified light beam emitted from the drive laser system and to direct the amplified light beam toward the target location. The beam delivery system includes a beam expansion system that expands a size of the amplified light beam and a focusing element that is configured and arranged to focus the amplified light beam at the target location.

Abstract: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.

Abstract: As disclosed herein, in a first aspect, a device may comprise: an oscillator producing a light output on a beam path; a target material for interaction with light on the beam path at an irradiation site; a beam delay on the beam path the beam delay having a beam folding optical arrangement; and a switch positioned along the beam path and interposed between the oscillator and the beam delay; the switch closable to divert at least a portion of light on the beam path from the beam path, the switch having close time, t1 and the beam path having a length, L1, along the path from the switch to the irradiation site; with t1<cL1, where c is the speed of light on the path, to protect the oscillator.

Abstract: An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½X kHz on output pulses from the second seed laser.

Abstract: A device is disclosed herein which may comprise a droplet generator producing droplets of target material; a sensor providing an intercept time signal when a droplet reaches a preselected location; a delay circuit coupled with said sensor, the delay circuit generating a trigger signal delayed from the intercept time signal; a laser source responsive to a trigger signal to produce a laser pulse; and a system controlling said delay circuit to provide a trigger signal delayed from the intercept time by a first delay time to generate a light pulse that is focused on a droplet and a trigger signal delayed from the intercept time by a second delay time to generate a light pulse which is not focused on a droplet.

Abstract: The bandwidth selection mechanism includes a first actuator mounted on a second face of a dispersive optical element, the second face being opposite from a reflective face, the first actuator having a first end coupled to a first end block and a second end coupled to a second end block, the first actuator being operative to apply equal and opposite forces to the first end block and the second end block to bend the body of the dispersive optical element along the longitudinal axis of the body and in a first direction normal to the reflective face of the dispersive optical element. The bandwidth selection mechanism also includes a second actuator being operative to apply equal and opposite forces to bend the body along the longitudinal axis of the body, in a second direction perpendicular to the reflective face of the dispersive optical element.

Abstract: An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½X kHz on output pulses from the second seed laser.

Abstract: A system and method generating an extreme ultraviolet light in an extreme ultraviolet light chamber including a collector mirror, a droplet generation system having a droplet outlet aligned to output a plurality of droplets along a target material path and a first catch including a first open end substantially aligned to the target material path and at least one internal surface oriented toward a second end of the first catch, the second end being opposite from the first open end.

Abstract: An apparatus is disclosed which may comprise a grating receiving light, a first prism moveable to coarsely select an angle of incidence of the light on the grating, and a second prism moveable to finely select an angle of incidence of the light on the grating. In one application, the apparatus may be used as a line narrowing module for a laser light source.

Abstract: An extreme ultraviolet light system includes a steering system that steers and focuses an amplified light beam traveling along a propagation direction to a focal plane near a target location within an extreme ultraviolet light chamber, a detection system including at least one detector positioned to detect an image of a laser beam reflected from at least a portion of a target material within the chamber, a wavefront modification system in the path of the reflected laser beam and between the target location and the detection system, and a controller. The wavefront modification system is configured to modify the wavefront of the reflected laser beam as a function of a target focal plane position along the propagation direction. The controller includes logic for adjusting a location of the focal plane of the amplified light beam relative to the target material based on the detected image of the reflected laser beam.

Abstract: A method and apparatus are disclosed for controlling bandwidth in a multi-portion laser system comprising a first line narrowed oscillator laser system portion providing a line narrowed seed pulse to an amplifier laser system portion, may comprise utilizing a timing difference curve defining a relationship between a first laser system operating parameter other than bandwidth and the timing difference and also a desired point on the curve defining a desired timing difference, wherein each unique operating point on the curve corresponds to a respective bandwidth value; determining an actual offset from the timing difference at the desired point on the curve to an actual operating point on the curve; determining an error between the actual offset and a desired offset corresponding to a desired bandwidth; modifying the firing differential timing to remove the error between the actual offset and the desired offset.

Abstract: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.

Abstract: A device is described herein which may comprise an optical amplifier having a gain band including wavelengths ?1 and ?2, with ?1??2; a pre-pulse seed laser having a tuning module for tuning a pre-pulse output to wavelength ?1; a main pulse seed laser generating a laser output having wavelength, ?2; and a beam combiner for directing the pre-pulse output and the main pulse output on a common path through the optical amplifier.

Abstract: A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound.