Patents by Inventor William N. Schnaitter

William N. Schnaitter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190360872
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Application
    Filed: August 9, 2019
    Publication date: November 28, 2019
    Inventor: William N. Schnaitter
  • Publication number: 20180356295
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Application
    Filed: June 18, 2018
    Publication date: December 13, 2018
    Inventor: William N. Schnaitter
  • Publication number: 20160320247
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Application
    Filed: July 14, 2016
    Publication date: November 3, 2016
    Inventor: William N. Schnaitter
  • Patent number: 9222843
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately know The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, the second diode may be coupled to an adjustable second current source. The current in the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: December 29, 2015
    Assignee: IC Kinetics Inc.
    Inventor: William N. Schnaitter
  • Patent number: 8508262
    Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: August 13, 2013
    Inventors: William N. Schnaitter, Guillermo J. Rozas
  • Patent number: 8496379
    Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: July 30, 2013
    Inventor: William N. Schnaitter
  • Publication number: 20120183017
    Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.
    Type: Application
    Filed: August 25, 2010
    Publication date: July 19, 2012
    Inventor: William N. Schnaitter
  • Publication number: 20120013364
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately know The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, the second diode may be coupled to an adjustable second current source. The current in the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Inventor: William N. Schnaitter
  • Publication number: 20110316597
    Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.
    Type: Application
    Filed: September 7, 2011
    Publication date: December 29, 2011
    Inventors: William N. Schnaitter, Guillermo J. Rozas
  • Patent number: 8035430
    Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: October 11, 2011
    Inventors: William N. Schnaitter, Guillermo J. Rozas
  • Patent number: 7798707
    Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: September 21, 2010
    Inventor: William N. Schnaitter
  • Publication number: 20100225366
    Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.
    Type: Application
    Filed: February 9, 2010
    Publication date: September 9, 2010
    Inventors: William N. Schnaitter, Guillermo J. Rozas
  • Patent number: 7747974
    Abstract: A method and apparatus for optimizing body bias connections to NFETs and PFETs using a deep n-well grid structure. A deep n-well is formed below the surface of a CMOS substrate supporting a plurality of NFETs and PFETs having a nominal gate length of less than 0.2 microns. The deep n-well is a grid structure with a regular array of apertures providing electrical continuity between the bottom of the substrate and the NFETs. The PFETs reside in surface n-wells that are continuous with the buried n-well grid structure. The grid and n-well layout is performed on the basis of the functionality of the PFETs contained in the n-wells.
    Type: Grant
    Filed: January 3, 2007
    Date of Patent: June 29, 2010
    Inventors: James B. Burr, William N. Schnaitter
  • Patent number: 7696797
    Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: April 13, 2010
    Inventors: William N. Schnaitter, Guillermo J. Rozas
  • Publication number: 20080144700
    Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.
    Type: Application
    Filed: December 15, 2006
    Publication date: June 19, 2008
    Inventor: William N. Schnaitter
  • Patent number: 7212064
    Abstract: Methods and systems for measuring temperature are described. A voltage source supplies a voltage. A current source supplies an amount of current that is controlled using a digital input signal. A diode is coupled to the current source. A comparator has a first input coupled to the voltage source and a second input coupled to a node between the current source and the diode. The digital input signal is changed to a value that causes an output of the comparator to change state. A value of the digital input signal is determined for each of two voltages. The values of the digital input signal and the two voltage values (or the difference between the two voltages) are used as inputs to a temperature calculation.
    Type: Grant
    Filed: February 11, 2005
    Date of Patent: May 1, 2007
    Assignee: Transmeta Corporation
    Inventor: William N. Schnaitter
  • Patent number: 7174528
    Abstract: A method and apparatus for optimizing body bias connections to NFETs and PFETs using a deep n-well grid structure. A deep n-well is formed below the surface of a CMOS substrate supporting a plurality of NFETs and PFETs having a nominal gate length of less than 0.2 microns. The deep n-well is a grid structure with a regular array of apertures providing electrical continuity between the bottom of the substrate and the NFETs. At least some of the PFETs reside in surface n-wells that are continuous with the buried n-well grid structure. The grid and n-well layout is performed on the basis of the functionality of the PFETs contained in the n-wells.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: February 6, 2007
    Assignee: Transmeta Corporation
    Inventors: James B. Burr, William N. Schnaitter
  • Patent number: 7118273
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Grant
    Filed: April 10, 2003
    Date of Patent: October 10, 2006
    Assignee: Transmeta Corporation
    Inventor: William N. Schnaitter
  • Patent number: 7108420
    Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
    Type: Grant
    Filed: October 7, 2004
    Date of Patent: September 19, 2006
    Assignee: Transmeta Corporation
    Inventor: William N. Schnaitter
  • Patent number: 6429491
    Abstract: A MOSFET transistor (2 FIG. 4) contains functional elements that together define an electrical capacitance (20, 27, 10-13) capable of accumulating a static electrical charge transferred from an external source, when the transistor is out of or removed from a circuit. An additional semiconductor device (21, 30, 11, 13) is integrated within said transistor and bypasses electrical charge from the capacitance to prevent such static charge from attaining a level at which said voltage spanning the dielectric element of the capacitance is sufficient to destroy the dielectric element. The foregoing protects the MOSFET and associated circuitry against static electricity without adversely affecting normal operation. In one embodiment, the additional semiconductor device is a lateral bipolar transistor.
    Type: Grant
    Filed: October 20, 1999
    Date of Patent: August 6, 2002
    Assignee: Transmeta Corporation
    Inventor: William N. Schnaitter