Patents by Inventor William N. Schnaitter
William N. Schnaitter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190360872Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: ApplicationFiled: August 9, 2019Publication date: November 28, 2019Inventor: William N. Schnaitter
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Publication number: 20180356295Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: ApplicationFiled: June 18, 2018Publication date: December 13, 2018Inventor: William N. Schnaitter
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Publication number: 20160320247Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: ApplicationFiled: July 14, 2016Publication date: November 3, 2016Inventor: William N. Schnaitter
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Patent number: 9222843Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately know The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, the second diode may be coupled to an adjustable second current source. The current in the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: GrantFiled: September 23, 2011Date of Patent: December 29, 2015Assignee: IC Kinetics Inc.Inventor: William N. Schnaitter
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Patent number: 8508262Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.Type: GrantFiled: September 7, 2011Date of Patent: August 13, 2013Inventors: William N. Schnaitter, Guillermo J. Rozas
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Patent number: 8496379Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.Type: GrantFiled: August 25, 2010Date of Patent: July 30, 2013Inventor: William N. Schnaitter
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Publication number: 20120183017Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.Type: ApplicationFiled: August 25, 2010Publication date: July 19, 2012Inventor: William N. Schnaitter
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Publication number: 20120013364Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately know The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, the second diode may be coupled to an adjustable second current source. The current in the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Inventor: William N. Schnaitter
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Publication number: 20110316597Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.Type: ApplicationFiled: September 7, 2011Publication date: December 29, 2011Inventors: William N. Schnaitter, Guillermo J. Rozas
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Patent number: 8035430Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.Type: GrantFiled: February 9, 2010Date of Patent: October 11, 2011Inventors: William N. Schnaitter, Guillermo J. Rozas
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Patent number: 7798707Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.Type: GrantFiled: December 15, 2006Date of Patent: September 21, 2010Inventor: William N. Schnaitter
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Publication number: 20100225366Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.Type: ApplicationFiled: February 9, 2010Publication date: September 9, 2010Inventors: William N. Schnaitter, Guillermo J. Rozas
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Patent number: 7747974Abstract: A method and apparatus for optimizing body bias connections to NFETs and PFETs using a deep n-well grid structure. A deep n-well is formed below the surface of a CMOS substrate supporting a plurality of NFETs and PFETs having a nominal gate length of less than 0.2 microns. The deep n-well is a grid structure with a regular array of apertures providing electrical continuity between the bottom of the substrate and the NFETs. The PFETs reside in surface n-wells that are continuous with the buried n-well grid structure. The grid and n-well layout is performed on the basis of the functionality of the PFETs contained in the n-wells.Type: GrantFiled: January 3, 2007Date of Patent: June 29, 2010Inventors: James B. Burr, William N. Schnaitter
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Patent number: 7696797Abstract: Systems and methods for design and operation of signal generator circuitry with output frequencies greater than the oscillator frequency. Accordingly, in a first method embodiment, a method of producing an output periodic electronic signal comprises accessing four signals having a quadrature phase relationship. First and second pairs of these signals having a one half cycle phase relationship are averaged to produce two signals having an improved duty cycle and a one-quarter cycle phase relationship. The first and second averaged periodic electronic signals are combined in an exclusive OR circuit to produce the output periodic electronic signal at twice the oscillator frequency. Advantageously, the periodic signal may comprise a desirable duty cycle of 50 percent.Type: GrantFiled: September 29, 2006Date of Patent: April 13, 2010Inventors: William N. Schnaitter, Guillermo J. Rozas
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Publication number: 20080144700Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.Type: ApplicationFiled: December 15, 2006Publication date: June 19, 2008Inventor: William N. Schnaitter
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Patent number: 7212064Abstract: Methods and systems for measuring temperature are described. A voltage source supplies a voltage. A current source supplies an amount of current that is controlled using a digital input signal. A diode is coupled to the current source. A comparator has a first input coupled to the voltage source and a second input coupled to a node between the current source and the diode. The digital input signal is changed to a value that causes an output of the comparator to change state. A value of the digital input signal is determined for each of two voltages. The values of the digital input signal and the two voltage values (or the difference between the two voltages) are used as inputs to a temperature calculation.Type: GrantFiled: February 11, 2005Date of Patent: May 1, 2007Assignee: Transmeta CorporationInventor: William N. Schnaitter
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Patent number: 7174528Abstract: A method and apparatus for optimizing body bias connections to NFETs and PFETs using a deep n-well grid structure. A deep n-well is formed below the surface of a CMOS substrate supporting a plurality of NFETs and PFETs having a nominal gate length of less than 0.2 microns. The deep n-well is a grid structure with a regular array of apertures providing electrical continuity between the bottom of the substrate and the NFETs. At least some of the PFETs reside in surface n-wells that are continuous with the buried n-well grid structure. The grid and n-well layout is performed on the basis of the functionality of the PFETs contained in the n-wells.Type: GrantFiled: October 10, 2003Date of Patent: February 6, 2007Assignee: Transmeta CorporationInventors: James B. Burr, William N. Schnaitter
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Patent number: 7118273Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: GrantFiled: April 10, 2003Date of Patent: October 10, 2006Assignee: Transmeta CorporationInventor: William N. Schnaitter
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Patent number: 7108420Abstract: A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.Type: GrantFiled: October 7, 2004Date of Patent: September 19, 2006Assignee: Transmeta CorporationInventor: William N. Schnaitter
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Patent number: 6429491Abstract: A MOSFET transistor (2 FIG. 4) contains functional elements that together define an electrical capacitance (20, 27, 10-13) capable of accumulating a static electrical charge transferred from an external source, when the transistor is out of or removed from a circuit. An additional semiconductor device (21, 30, 11, 13) is integrated within said transistor and bypasses electrical charge from the capacitance to prevent such static charge from attaining a level at which said voltage spanning the dielectric element of the capacitance is sufficient to destroy the dielectric element. The foregoing protects the MOSFET and associated circuitry against static electricity without adversely affecting normal operation. In one embodiment, the additional semiconductor device is a lateral bipolar transistor.Type: GrantFiled: October 20, 1999Date of Patent: August 6, 2002Assignee: Transmeta CorporationInventor: William N. Schnaitter