Abstract: Placement of a stent having a tethered ferromagnetic bead may be facilitated with a modified pusher having an opening at the distal end of the pusher to receive the tethered ferromagnetic bead. The ferromagnetic bead may be positioned within the bladder whereby a tether connection to a shortened stent ending within the ureter may be used to reduce the likelihood of patient irritation. The bead, tether, and stent assembly may be advanced into the patient as a unit along a conventional guide wire and using a conventional cystoscope.

Abstract: Placement of a stent having a tethered ferromagnetic bead may be facilitated with a modified pusher having an opening at the distal end of the pusher to receive the tethered ferromagnetic bead. The ferromagnetic bead may be positioned within the bladder whereby a tether connection to a shortened stent ending within the ureter may be used to reduce the likelihood of patient irritation. The bead, tether, and stent assembly may be advanced into the patient as a unit along a conventional guide wire and using a conventional cystoscope.

Abstract: Placement of a stent having a tethered ferromagnetic bead may be facilitated with a modified pusher having an opening at the distal end of the pusher to receive the tethered ferromagnetic bead. The ferromagnetic bead may be positioned within the bladder whereby a tether connection to a shortened stent ending within the ureter may be used to reduce the likelihood of patient irritation. The bead, tether, and stent assembly may be advanced into the patient as a unit along a conventional guide wire and using a conventional cystoscope.

Abstract: Placement of a stent having a tethered ferromagnetic bead may be facilitated with a modified pusher having an opening at the distal end of the pusher to receive the tethered ferromagnetic bead. The ferromagnetic bead may be positioned within the bladder whereby a tether connection to a shortened stent ending within the ureter may be used to reduce the likelihood of patient irritation. The bead, tether, and stent assembly may be advanced into the patient as a unit along a conventional guide wire and using a conventional cystoscope.

Abstract: Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.

Abstract: A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said reaction zone, a plasma power source for forming a plasma from a process gas introduced into the reaction zone of the deposition chamber and an impedance monitor that is electrically coupled to the deposition chamber to measure an impedance level of the plasma. In a preferred embodiment, the substrate holder is a first electrode and the gas inlet manifold is a second electrode and RF power is supplied by the plasma power source to either the first or second electrodes to form the plasma.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: Placement and non-surgical removal of a ureteral stent is accomplished by suspending a ferromagnetic bead from an indwelling stent. The bead is suspended by a flaccid tether that reduces the likelihood of patient irritation when a shortened stent is used. The bead, tether, and stent assembly are advanced into the patient as a unit via a conventional cystoscope. A magnet-tipped catheter is employed to engage the bead in the bladder and permit removal of the connected stent as the catheter is withdrawn.

Abstract: The present invention provides a safety guard for a type-N coaxial connector that prevents casual human contact with a conductive center pin of the coaxial cable. The safety guard is preferably made of a dielectric material and is generally tubular in shape. The safety guard is adapted to be installed on existing connectors in the field, or to be part of a connector assembly that is to be installed on a coaxial cable. Among the advantages of the present invention are substantial reduction in complexity over prior art interlock connector designs. The safety guard of the present invention is provided for a male connector only, thereby alleviating the need for modification of the mating female connector.

Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

Abstract: An apparatus and associated method for transporting a first substrate and a second substrate relative to a cell. The cell contains a pedestal that is configured to interact with a single substrate. When swapping wafers in a cell, a first substrate is displaced from the pedestal to a remote location and a second substrate is inserted into the cell and onto the pedestal. The first substrate is then removed from the cell.

Abstract: A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: The present invention provides a safety guard for a type-N coaxial connector that prevents casual human contact with a conductive center pin of the coaxial cable. The safety guard is preferably made of a dielectric material and is generally tubular in shape. The safety guard is adapted to be installed on existing connectors in the field, or to be part of a connector assembly that is to be installed on a coaxial cable. Among the advantages of the present invention are substantial reduction in complexity over prior art interlock connector designs. The safety guard of the present invention is provided for a male connector only, thereby alleviating the need for modification of the mating female connector.

Abstract: Placement and non-surgical removal of a ureteral stent is accomplished by suspending a ferromagnetic bead from an indwelling stent The bead is suspended by a flaccid tether that reduces the likelihood of patient irritation when a shortened stent is used. The bead, tether, and stent assembly are advanced into the patient as a unit via a conventional cystoscope. A magnet-tipped catheter is employed to engage the bead in the bladder and permit removal of the connected stent as the catheter is withdrawn.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second electrodes having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber. The collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A plasma generation system supplies power to the electrodes to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit.

Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

Abstract: A variable capacitor that provides a full range of capacitance, while reducing the amount of rotation necessary to effect maximum variation in capacitance, and while eliminating any wear-related deterioration in device performance includes at least two coplanar, electrically isolated sets of parallel electroconductive members so configured as to form a fixed set of capacitor plates, each of which may be separately electrically connected to an electrical circuit. A movable group having at least one member including at least one electroconductive area is positioned parallel to, and spaced from, the fixed set of plates. The movable group is adapted for rotation about an axis perpendicular to a surface plane of the first set of plates to vary an amount by which said movable group overlaps the surface of each of said capacitor plates, and thereby provide variable capacitive coupling between the two isolated electroconductive members that comprise the fixed set of capacitor plates.