Patents by Inventor William P. Meuli

William P. Meuli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
    Patent number: 4536251
    Abstract: A method for eliminating laser induced substrate fissures associated with laser annealed crystallization of patterned silicon areas, for increasing the yield of useable single crystal areas. The fissures are created by enhanced etching of the substrate, at the exposed edges of the areas, during the removal of a dimension stabilizing encapsulating layer. A post crystallization, high temperature anneal, in an oxidizing atmosphere prevents the enhanced etching of the substrate.
    Type: Grant
    Filed: June 4, 1984
    Date of Patent: August 20, 1985
    Assignee: Xerox Corporation
    Inventors: Anne Chiang, William P. Meuli