Abstract: Various technologies for integrating a microinverter with a photovoltaic module are disclosed. An alternating current photovoltaic (ACPV) module includes a photovoltaic module having a frame and a junction box including a direct current (DC) output connector, and a microinverter having a housing coupled to the frame and a DC input connector electrically mated with the DC output connector of the photovoltaic module.

Abstract: Various technologies for integrating a microinverter with a photovoltaic module are disclosed. An alternating current photovoltaic (ACPV) module includes a photovoltaic module having a frame and a junction box including a direct current (DC) output connector, and a microinverter having a housing coupled to the frame and a DC input connector electrically mated with the DC output connector of the photovoltaic module.

Abstract: Various technologies for integrating a microinverter with a photovoltaic module are disclosed. An alternating current photovoltaic (ACPV) module includes a photovoltaic module having a frame and a junction box including a direct current (DC) output connector, and a microinverter having a housing coupled to the frame and a DC input connector electrically mated with the DC output connector of the photovoltaic module.

Abstract: Various technologies for integrating a microinverter with a photovoltaic module are disclosed. An alternating current photovoltaic (ACPV) module includes a photovoltaic module having a frame and a junction box including a direct current (DC) output connector, and a microinverter having a housing coupled to the frame and a DC input connector electrically mated with the DC output connector of the photovoltaic module.

Abstract: In one embodiment, an in-line furnace includes a continuous conveyor configured to hold wafers at an angle relative to ground. The conveyor may have fixedly integrated wafer retainers configured to hold the wafers in slots. The conveyor may be formed by several segments that are joined together. Each of the segments may include a base and a set of wafer retainers formed thereon. The conveyor may be driven to move the wafers through a chamber of the furnace, where the wafers are thermally processed.

Abstract: In one embodiment, an in-line furnace includes a continuous conveyor configured to hold wafers at an angle relative to ground. The conveyor may have fixedly integrated wafer retainers configured to hold the wafers in slots. The conveyor may be formed by several segments that are joined together. Each of the segments may include a base and a set of wafer retainers formed thereon. The conveyor may be driven to move the wafers through a chamber of the furnace, where the wafers are thermally processed.

Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.

Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.

Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.

Abstract: In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.

Abstract: In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.

Abstract: In one embodiment, an in-line furnace includes a continuous conveyor configured to hold wafers at an angle relative to ground. The conveyor may have fixedly integrated wafer retainers configured to hold the wafers in slots. The conveyor may be formed by several segments that are joined together. Each of the segments may include a base and a set of wafer retainers formed thereon. The conveyor may be driven to move the wafers through a chamber of the furnace, where the wafers are thermally processed.

Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer in offset levels through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.

Abstract: In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.

Abstract: Edge passivation for a small area silicon cell is provided in a batch process by providing streets between individual cells formed in a silicon substrate and diffusing dopant through the substrate along the streets. Following completion of fabrication of the plurality of cells in the substrate, the substrate is sawed along the streets with the diffused region providing passivation along the edges of the individual die.

Abstract: The present invention is a hydrocarbon fired thermophotovoltaic furnace having a non-fused silica tube. In a preferred embodiment, the furnace has an infrared emitter tube having a top end and a bottom end and a substantially transparent non-fused silica window tube having a closed top end. The window tube is positioned concentrically around the infrared emitter tube, and the infrared emitter tube is in fluid communication with the window tube. The window tube is preferably composed of Lucalox (alumina or Chromolux), magnesia, yterria, titania, spinel, stablized zirconia or yterria alumina garnet. In another preferred embodiment, the furnace has a radiator tube having a top end and a bottom end and an infrared emitter tube having a closed top end. The infrared emitter tube is positioned concentrically around the radiator tube, and the radiator tube is in fluid communication with the infrared emitter tube. Fluid flows from the inner tube to the outer tube.

Abstract: A small and light cylindrical thermophotovoltaic generator uses gaseous fuels, a counter flow heat exchanger, regenerator and low bandgap photovoltaic cells. In the fuel injection system, with preheated air from a recuperator, fuel combustion begins immediately when the fuel and air first meet. A hot and compact burn results from complete and rapid fuel and air mixing. A venturi necks down the air flow, and a chemically etched jet shim disk creates over 150 small fuel jet streams. The emitter geometric configuration provides good hot gas energy transfer to the IR emitter. Four alternate emitter configurations accomplish the good heat transfer. One emitter is a composite SiC with integrally formed internal fins which extend into the combustion chamber. The photovoltaic converter assembly has good spectral control, good high rate but lightweight heat removal and high current-carrying capability, while maintaining low parasitic IR absorption.

Abstract: A communication cable includes a core of twisted pairs of electrical conductors and a cable jacket. The inner surface of the cable jacket includes a plurality of sharply angled striations disposed such that adjacent striations define sharply angled inwardly directed projections.

Abstract: A vacuum toilet system is protected against overflow of a toilet bowl by an overflow protection system that automatically generates an overflow condition signal when the toilet bowl is in a near-full condition and initiates a discharge valve operating cycle, in which the discharge valve of the toilet bowl is opened and closed independently of the flush member associated with the toilet bowl, in response to the overflow condition signal.

Abstract: A sewage collection and disposal system for a passenger transport vehicle comprises a sewage collection tank having a sewage inlet connected to a sewer pipe of the vehicle and a sewage discharge outlet for draining sewage from the sewage collection tank under control of a drain valve. A cleaning liquid supply pipe connects a source of cleaning liquid under pressure to a cleaning liquid supply connection for introducing cleaning liquid into the sewage collection tank. A precharge tank that is in fluid communication with the sewage collection tank is also connected to the cleaning liquid supply pipe, whereby cleaning liquid is supplied to the precharge tank when cleaning liquid is supplied to the cleaning liquid supply member. A blower establishes a partial vacuum in the sewage collection tank when the drain valve is closed, whereby pressure difference between the precharge tank and the sewage collection tank forces cleaning liquid present in the precharge tank into the sewage collection tank.