Abstract: The improved plumbing P-trap is a plumbing fixture. The improved plumbing P-trap attaches the drain of a sink to a DWV. The improved plumbing P-trap transports gray water into the DWV from the sink. The improved plumbing P-trap comprises a modified P-trap, a second clean out plug, and a snake guide. The modified P-trap transports gray water from the sink drain to the DWV. The second clean out plug is the modification to the modified P-trap that provides access to the DWV side of the modified P-trap. The second clean out plug is intended for use with a plumbing snake. The snake guide: 1) opens the second clean out plug; and, 2) attaches to the second clean out plug to guide the plumbing snake into the DWV.

Abstract: A universal offset lawn mower towing device includes a hitch engagement unit having a first elongated shaft with an opening along one end. An offset adjustment unit having a second elongated shaft member is slidingly positioned within the first elongated shaft, and further includes a semi-circular plate with a plurality of alignment apertures. A pair of mower attachment arms extend outward from the semi-circular plate and include mower attachment nuts along their distal ends. A safety tether includes an elongated steel cable that runs the length of the device, and connects the safety handle of the upright mower to the riding mower.

Abstract: A universal offset lawn mower towing device includes a hitch engagement unit having a first elongated shaft with an opening along one end. An offset adjustment unit having a second elongated shaft member is slidingly positioned within the first elongated shaft, and further includes a semi-circular plate with a plurality of alignment apertures. A pair of mower attachment arms extend outward from the semi-circular plate and include mower attachment nuts along their distal ends. A safety tether includes an elongated steel cable that runs the length of the device, and connects the safety handle of the upright mower to the riding mower.

Abstract: An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.