Abstract: Methods for releasably attaching sacrificial support members to microfeature workpieces and microfeature devices formed using such methods are disclosed herein. One embodiment, for example, is directed to a method for processing a microfeature workpiece releasably attached to a first support member. The workpiece includes a microelectronic substrate, a plurality of microelectronic dies on and/or in the substrate, and a sacrificial support member attached to an active side of the substrate. The method can include separating individual dies from the workpiece by cutting through the sacrificial support member and the substrate while the workpiece is attached to the first support member. The method can also include attaching a singulated die and corresponding portion of the sacrificial support member as a unit to a second support member.

Abstract: Methods for releasably attaching sacrificial support members to microfeature workpieces and microfeature devices formed using such methods are disclosed herein. One embodiment, for example, is directed to a method for processing a microfeature workpiece releasably attached to a first support member. The workpiece includes a microelectronic substrate, a plurality of microelectronic dies on and/or in the substrate, and a sacrificial support member attached to an active side of the substrate. The method can include separating individual dies from the workpiece by cutting through the sacrificial support member and the substrate while the workpiece is attached to the first support member. The method can also include attaching a singulated die and corresponding portion of the sacrificial support member as a unit to a second support member.

Abstract: A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the target depth for the etching process. The second stage etch is a reactive ion etch which directionally follows the facet profile to reach the target depth.

Abstract: A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber during the etching of a photoresist layer of a semiconductor wafer within the reaction chamber and the environment is regulated to form the polymer on the interior surface of the chamber. The polymer thus formed reduces the standard deviation of the critical dimensions of the semiconductor wafer. A method for the manufacture of integrated circuits is also provided.

Abstract: A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the target depth for the etching process. The second stage etch is a reactive ion etch which directionally follows the facet profile to reach the target depth.

Abstract: A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber during the etching of a photoresist layer of a semiconductor wafer within the reaction chamber and the environment is regulated to form the polymer on the interior surface of the chamber. The polymer thus formed reduces the standard deviation of the critical dimensions of the semiconductor wafer. A method for the manufacture of integrated circuits is also provided.

Abstract: A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber and the environment is regulated to form the polymer on the interior surface of the chamber. Methods for the manufacture of integrated circuits, electronic devices, and electronic systems, are also provided.

Abstract: A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber and the environment is regulated to form the polymer on the interior surface of the chamber. Methods for the manufacture of integrated circuits, electronic devices, and electronic systems, are also provided.

Abstract: A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the target depth for the etching process. The second stage etch is a reactive ion etch which directionally follows the facet profile to reach the target depth.

Abstract: A modified facet is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the target depth for the etching process. The second stage etch is a reactive ion etch which directionally follows the facet profile to reach the target depth.

Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.

Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.

Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.