Abstract: A composition, and methods of making and using such a composition, whereby the composition can include a printable ink formulation having a colorant which undergoes a visible color change upon exposure to a wetness threshold. The colorant can be highly resistant to leaching. Additionally, the colorant can be resistant to premature activation via ambient moisture or humidity.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.

Abstract: A case for an ammunition cartridge comprising a tubular member having a central axis which comprises: a head which comprises, a head face which is disposed substantially perpendicular to the central axis, and an extraction groove adjacent to the head face, the extraction groove circumscribing the central axis; a body abutting the head which comprises an internal chamber, a bullet receiving end spaced from the body along the central axis, a convex curved segment abutting the body, the convex curved segment being a first circular curve having a first radius of approximately 0.0263 inches, a frusto-conical segment abutting the convex curved segment, and a concave curved segment abutting the frusto-conical segment, the concave curved segment being a second circular curve having a second radius of approximately 0.1049 inches.

Abstract: A case for an ammunition cartridge including a tubular member having a central axis which includes: a head which includes, a head face which is disposed substantially perpendicular to the central axis, and an extraction groove adjacent to the head face, the extraction groove circumscribing the central axis; a body abutting the head which comprises an internal chamber, a bullet receiving end spaced from the body along the central axis, a convex curved segment abutting the body, the convex curved segment being a first circular curve having a first radius of approximately 0.0263 inches, a frusto-conical segment abutting the convex curved segment, and a concave curved segment abutting the frusto-conical segment, the concave curved segment being a second circular curve having a second radius of approximately 0.1049 inches.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.