Patents by Inventor William R. Brunsvold
William R. Brunsvold has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6927015Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: GrantFiled: August 18, 2004Date of Patent: August 9, 2005Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Patent number: 6818381Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: GrantFiled: December 21, 2001Date of Patent: November 16, 2004Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Publication number: 20020058204Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: ApplicationFiled: December 21, 2001Publication date: May 16, 2002Applicant: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Patent number: 6372406Abstract: Deactivated aromatic amines are useful to improve shelf life and performance of acid-catalyzed photoresist compositions without adverse interaction with radiation-sensitive acid generator components in said resist. The compositions are especially useful in photolithography processes used in forming integrated circuits and other miniaturized components.Type: GrantFiled: November 6, 2000Date of Patent: April 16, 2002Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Ahmad D. Katnani, Pushkara R. Varanasi
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Patent number: 6057080Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.Type: GrantFiled: December 9, 1997Date of Patent: May 2, 2000Assignee: International Business Machines CorporationInventors: William R. Brunsvold, George J. Hefferon, Christopher F. Lyons, Wayne M. Moreau, Robert L. Wood
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Patent number: 5919597Abstract: Methods are provided to prepare photoresists without isolation of various components, i.e. in a "one-pot" procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.Type: GrantFiled: October 30, 1997Date of Patent: July 6, 1999Assignees: IBM Corporation of Armonk, Shipley Company, L.L.C. of MarlboroughInventors: Roger F. Sinta, Uday Kumar, George W. Orsula, James I. T. Fahey, William R. Brunsvold, Wu-Song Huang, Ahmad D. Katnani, Ronald W. Nunes, Mahmoud M. Khojasteh
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Patent number: 5744537Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.Type: GrantFiled: May 27, 1997Date of Patent: April 28, 1998Assignee: International Business Machines CorporationInventors: William R. Brunsvold, George J. Hefferon, Christopher F. Lyons, Wayne M. Moreau, Robert L. Wood
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Patent number: 5609989Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.Type: GrantFiled: June 6, 1995Date of Patent: March 11, 1997Assignee: International Business Machines, CorporationInventors: Nageshwer R. Bantu, William R. Brunsvold, George J. Hefferon, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Ratnam Sooriyakumaran, Dominic C. Yang
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Patent number: 5567569Abstract: Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.Type: GrantFiled: March 15, 1996Date of Patent: October 22, 1996Assignee: International Business Machines CorporationInventors: Ari Aviram, William R. Brunsvold, Daniel Bucca, Willard E. Conley, Jr., David E. Seeger
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Patent number: 5552256Abstract: Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.Type: GrantFiled: September 29, 1994Date of Patent: September 3, 1996Assignee: International Business Machines CorporationInventors: Ari Aviram, William R. Brunsvold, Daniel Bucca, Willard E. Conley, Jr., David E. Seeger
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Patent number: 5338818Abstract: A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.Type: GrantFiled: September 10, 1992Date of Patent: August 16, 1994Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Premlatha Jagannathan, Steve S. Miura, Melvin W. Montgomery, Harbans S. Sachdev, Ratnam Sooriyakumaran
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Patent number: 5272042Abstract: Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.Type: GrantFiled: September 17, 1991Date of Patent: December 21, 1993Assignee: International Business Machines CorporationInventors: Robert D. Allen, William R. Brunsvold, Burton J. Carpenter, William D. Hinsberg, Joseph LaTorre, Michael G. McMaster, Melvin W. Montgomery, Wayne M. Moreau, Logan L. Simpson, Robert J. Tweig, Gregory M. Wallraff
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Patent number: 5164278Abstract: Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.Type: GrantFiled: March 1, 1990Date of Patent: November 17, 1992Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Christopher J. Knors, Melvin W. Montgomery, Wayne M. Moreau, Kevin M. Welsh
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Patent number: 5023164Abstract: Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.Type: GrantFiled: October 23, 1989Date of Patent: June 11, 1991Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Philip Chiu, Willard E. Conley, Jr., Dale M. Crockatt, Melvin W. Montgomery, Wayne M. Moreau
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Patent number: 4939070Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow.Type: GrantFiled: July 7, 1988Date of Patent: July 3, 1990Inventors: William R. Brunsvold, Ming-Fea Chow, Willard E. Conley, Dale M. Crockatt, Jean M. J. Frechet, George J. Hefferon, Hiroshi Ito, Nancy E. Iwamoto, Carlton G. Willson
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Patent number: 4931379Abstract: The present invention relates to increasing the autodecomposition temperature of particular resists. The resists are comprised of structures having recurrent acid labile groups which are typically pendant to the polymeric backbone. The autodecomposition temperature of a resist is increased by selecting substituent sidechains on the acid labile group which exhibit increased stability. Sidechain structures which provide increased autodecomposition stability include secondary structures capable of forming secondary carbonium ion intermediates and having an available proton adjacent to the carbonium ion formed during cleavage. Moieties which can be used as the secondary sidechain structures include secondary alkyl, including both cyclic and alicyclic alkyl, substituted deactivated secondary benzyl, and 1-(deactivated heterocyclic) secondary alkyl.Type: GrantFiled: November 3, 1988Date of Patent: June 5, 1990Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Willard E. Conley, Dale M. Crockatt, Nancy E. Iwamoto
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Patent number: 4828964Abstract: A composition for use in a process for the deposition of patterned thin metal films on integrated circuit substrates, the composition comprising an admixture of a thermoplastic polyimide resin and a coumarin dye dissolved in a substituted phenol solvent. Optionally a polar solvent having a boiling point greater than 160.degree. C. and a low boiling organic compound (70.degree.-150.degree. C.) may be incorporated in the composition.Type: GrantFiled: September 4, 1987Date of Patent: May 9, 1989Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Willard E. Conley, Scott L. Jacobs, George L. Mack, David P. Merritt, Ann M. Uptmor