Patents by Inventor William R. Flederbach

William R. Flederbach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9134777
    Abstract: Systems and methods for bi-modal and fine grained power delivery to an integrated circuit comprising functional blocks. A first power source is coupled to a functional block of the integrated circuit for supporting a first operating mode of the functional block. A second power source is coupled to the functional block for supporting a second operating mode of the functional block. The first and second operating modes can be high and low frequency modes respectively. The second power source can be derived from the first power source using on-die regulators or provided independently. A desired average throughput of the functional block can be achieved by controlling duty cycles of the first and second power sources.
    Type: Grant
    Filed: June 6, 2012
    Date of Patent: September 15, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Yeshwant Nagaraj Kolla, Jeffrey Herbert Fischer, William R. Flederbach
  • Patent number: 9070551
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: June 30, 2015
    Assignee: Qualcomm Incorporated
    Inventors: Benjamin John Bowers, James W. Hayward, Charanya Gopal, Gregory Christopher Burda, Robert J. Bucki, Chock H. Gan, Giridhar Nallapati, Matthew D. Youngblood, William R. Flederbach
  • Publication number: 20150064864
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Application
    Filed: November 11, 2014
    Publication date: March 5, 2015
    Inventors: Benjamin John BOWERS, James W. HAYWARD, Charanya GOPAL, Gregory Christopher BURDA, Robert J. BUCKI, Chock H. GAN, Giridhar NALLAPATI, Matthew D. YOUNGBLOOD, William R. FLEDERBACH
  • Publication number: 20140367760
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Application
    Filed: August 23, 2013
    Publication date: December 18, 2014
    Applicant: Qualcomm Incorporated
    Inventors: Benjamin John BOWERS, James W. HAYWARD, Charanya GOPAL, Gregory Christopher BURDA, Robert J. BUCKI, Chock H. GAN, Giridhar NALLAPATI, Matthew D. YOUNGBLOOD, William R. FLEDERBACH
  • Patent number: 8782576
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: July 15, 2014
    Assignee: QUALCOMM Incorporated
    Inventors: Benjamin John Bowers, James W. Hayward, Charanya Gopal, Gregory Christopher Burda, Robert J. Bucki, Chock H. Gan, Giridhar Nallapati, Matthew D. Youngblood, William R. Flederbach
  • Publication number: 20140181761
    Abstract: Embodiments of the disclosure include identifying circuit elements for selective inclusion in speed-push processing and related circuit systems, apparatus, and computer-readable media. A method for altering a speed-push mask is provided, including analyzing a circuit design comprising a plurality of cells to which a speed-push mask is applied to identify at least one of the plurality of cells as having performance margin. The speed-push mask is altered such that the at least one of the plurality of cells having performance margin may be fabricated as a non-speed-pushed cell. Additionally, a method for creating a speed-push mask is provided, including analyzing a circuit design comprising a plurality of cells to identify at least one of the plurality of cells below a performance threshold. A speed-push mask is created such that the at least one of the plurality of cells below the performance threshold may be fabricated as a speed-pushed cell.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 26, 2014
    Applicant: QUALCOMM Incorporated
    Inventors: Jeffrey H. Fischer, William R. Flederbach, Kyungseok Kim, Robert J. Bucki, Chock H. Gan, William J. Goodall, III
  • Publication number: 20130332748
    Abstract: Systems and methods for bi-modal and fine grained power delivery to an integrated circuit comprising functional blocks. A first power source is coupled to a functional block of the integrated circuit for supporting a first operating mode of the functional block. A second power source is coupled to the functional block for supporting a second operating mode of the functional block. The first and second operating modes can be high and low frequency modes respectively. The second power source can be derived from the first power source using on-die regulators or provided independently. A desired average throughput of the functional block can be achieved by controlling duty cycles of the first and second power sources.
    Type: Application
    Filed: June 6, 2012
    Publication date: December 12, 2013
    Applicant: QUALCOMM INCORPORATED
    Inventors: Yeshwant Nagaraj Kolla, Jeffrey Herbert Fischer, William R. Flederbach