Abstract: An improved field effect transistor sense amplifier uses a cross-coupled pair of first transistors (Q1, Q2) with separate third and fourth transistors (Q3, Q4) connected by the sources (12, 14) to each of one of cross-coupled terminals (12, 14) of the cross-coupled pair (Q1, Q2). Read circuitry (Q7, Q8) is connected directly to the cross-coupled terminals (12, 14) of the cross-coupled pair (Q1, Q2). Write circuitry (Q9, Q10) is connected to the drains (18, 22) of the third and fourth transistors (Q3, Q4).

Abstract: An MOS dynamic random access memory (RAM) includes an array of memory cells arranged in rows and columns. The array is divided into two or more sub-arrays. In an operating cycle where a cell is being accessed for reading and/or writing, only the sub-array containing the accessed cell is fully selected while the other sub-arrays are partially selected. A fully selected sub-array is one in which both a row and a column are selected, whereas in a partially selected sub-array, only a row is selected. In the partially selected sub-array where only refreshing of the cells in the selected row takes place, the column decoders and drivers remain inactive throughout the memory cycle.