Patents by Inventor William R. Knolle

William R. Knolle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protective layer for high voltage devices
    Patent number: 5107323
    Abstract: A semi-insulating layer is formed over a high voltage device in order to protect the device substrate from charge buildup. A layer comprising silicon oxynitride is deposited over the semi-insulating layer in order to prevent arcing between device electrodes and provide corrosion resistance.
    Type: Grant
    Filed: May 16, 1991
    Date of Patent: April 21, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: William R. Knolle, John W. Osenbach
  • Resistive field shields for high voltage devices
    Patent number: H665
    Abstract: A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device.
    Type: Grant
    Filed: October 19, 1987
    Date of Patent: August 1, 1989
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: William R. Knolle, John W. Osenbach