Abstract: An example method of producing a microelectromechanical system (MEMS) package, the method comprising: applying first epoxy layers to a first substrate, at least one of the first epoxy layers coupled to a second substrate; applying a first post gel heat treatment to the first epoxy layers; after applying the first post gel heat treatment to the first epoxy layers, applying second epoxy layers to the second substrate and to the first epoxy layers; and applying a second post gel heat treatment to the first epoxy layers and the second epoxy layers.

Abstract: An apparatus includes: a substrate having a first set of bond pads; an integrated circuit (IC) having a second set of bond pads; bond wires between bond pads of the first set of bond pads and respective bond pads of the second set of bond pads; a first encapsulant layer in contact with the substrate and spaced away from the IC; a second encapsulant layer in contact with the IC and spaced away from the substrate, the second encapsulant layer separated from the first encapsulant layer by a gap; and a third encapsulant layer in contact with at least one of the first encapsulant layer and the second encapsulant layer, the third encapsulant layer at least partially covering the gap.

Abstract: An example method of producing a microelectromechanical system (MEMS) package, the method comprising: applying first epoxy layers to a first substrate, at least one of the first epoxy layers coupled to a second substrate; applying a first post gel heat treatment to the first epoxy layers; after applying the first post gel heat treatment to the first epoxy layers, applying second epoxy layers to the second substrate and to the first epoxy layers; and applying a second post gel heat treatment to the first epoxy layers and the second epoxy layers.

Abstract: An example method of producing a microelectromechanical system (MEMS) package, the method comprising: applying first epoxy layers to a first substrate, at least one of the first epoxy layers coupled to a second substrate; applying a first post gel heat treatment to the first epoxy layers; after applying the first post gel heat treatment to the first epoxy layers, applying second epoxy layers to the second substrate and to the first epoxy layers; and applying a second post gel heat treatment to the first epoxy layers and the second epoxy layers.

Abstract: In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Abstract: In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Abstract: A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

Abstract: A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

Abstract: In accordance with the teachings of one embodiment of the present disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).

Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).

Abstract: A method for effecting a finishing operation on a semiconductor workpiece situated in a finishing apparatus that includes a finishing tool configured for pressingly engaging the workpiece with a pressing force for abradingly removing material from the workpiece includes the steps of: (a) situating the finishing tool to operate against the workpiece; (b) operating the finishing tool with a pressing force to effect the abrading removal; (c) measuring at least one parameter associated with the finishing operation to determine at least one parametric value for the at least one parameter; (d) modulating the pressing force according to a predetermined relationship between the pressing force and the at least one parametric value; and (e) repeating steps (c) and (d) until the finishing operation is complete.

Abstract: A chemical mechanical polishing method using a modified slurry. A modified slurry is used with high platen rotational speed and high wafer carrier rotation speeds. The endpoint of the polishing process is determined by monitoring the electrical current of the wafer carrier motor.

Abstract: An device for use down-hole in an oil well for inducing heavy crude oil to flow into the inlet of a centrifugal pump by creating a positive pressure on the bottom inlet of the pump. The device inserts into the down-hole equipment string between the gas separator and the centrifugal pump. The device consists of an auger that attaches to and rotates with the shaft of an electric down-hole motor and a housing that surrounds the auger. The housing connects to the gas separator at the bottom end of the device and connects to the centrifugal pump at a top end of the device. The auger has tight clearance with the housing to enable the rotating auger to force the fluid upward within the housing as the auger rotates. The vanes of the auger are arranged so that the fluid is pushed with increasing pressure as it moves upward through the device to the centrifugal pump.

Abstract: An improved slurry for polish removal. One application of this slurry is for shallow trench isolation processing in semiconductor manufacturing. The improved slurry has an enhanced oxide to nitride polish removal selectivity. A modified slurry is formed by mixing a polishing slurry with tetramethyl ammonium hydroxide and hydrogen peroxide. In an alternative embodiment, the modified slurry is formed by mixing a salt of tetramethyl ammonium with a base and with hydrogen peroxide to form the modified slurry. The improved slurry when used during the chemical mechanical polishing (CMP) step of an integrated shallow trench isolation manufacturing process allows the reverse pattern, etch and clean steps to be eliminated prior to CMP.

Abstract: Coker water from a delayed coking process is cooled and a water soluble, organic cationic surface active compound is introduced to produce a substantially water free oil stream and a substantially oil free coker water stream which can be returned to the coking process.