Abstract: A method for controlling the storage of data among multiple regional storage centers coupled through a network in a global storage system is provided. The method includes steps of: defining at least one dataset comprising at least a subset of the data stored in the global storage system; defining at least one ruleset for determining where to store the dataset; obtaining information regarding a demand for the dataset through one or more data requesting entities operating in the global storage system; and determining, as a function of the ruleset, information regarding a location for storing the dataset among regional storage centers having available resources that reduces the total distance traversed by the dataset in serving at least a given one of the data requesting entities and/or reduces the latency of delivery of the dataset to the given one of the data requesting entities.

Abstract: A method for controlling the storage of data among multiple regional storage centers coupled through a network in a global storage system is provided. The method includes steps of: defining at least one dataset comprising at least a subset of the data stored in the global storage system; defining at least one ruleset for determining where to store the dataset; obtaining information regarding a demand for the dataset through one or more data requesting entities operating in the global storage system; and determining, as a function of the ruleset, information regarding a location for storing the dataset among regional storage centers having available resources that reduces the total distance traversed by the dataset in serving at least a given one of the data requesting entities and/or reduces the latency of delivery of the dataset to the given one of the data requesting entities.

Abstract: Described is an integrated circuit having a clock distribution network capable of transitioning from a non-resonant clock mode to a first resonant clock mode Transitions between clock modes or between various resonant clock frequencies are done gradually over a series of clock cycles. In example, when transitioning from a non-resonant clock mode to a first resonant clock mode, a strength of a clock sector driver is reduced over a series of clock cycles, and individual ones of a plurality of resonant switches associated with resonant circuits are modified in coordination with reducing the strength of the clock sector driver.

Abstract: A wide bandwidth resonant clock distribution comprises a clock grid configured to distribute a clock signal to a plurality of components of an integrated circuit, at least one inductor, at least one tunable resistance switch, and a capacitor network. The inductor, tunable resistance switch, and capacitor network are connected between the clock grid and a reference voltage. The at least one tunable resistance switch is programmable to dynamically switch the at least one inductor in or out of the clock distribution to effect at least one resonant mode of operation or a non-resonant mode of operation based on a frequency of the clock signal.

Abstract: A classification system executing on one or more computer systems includes a processor and a memory coupled to the processor. The memory includes a discovery engine configured to navigate through non-volatile memory storage to discover an identity and location of one or more files in one or more computer storage systems by tracing the one or more files from file system mount points through file system objects and to disk objects. A classifier is configured to classify the one or more the files into a classification category. The one or more files are associated with the classification category and stored in at least one data structure. Methods are also provided.

Abstract: A memory circuit comprises a memory array including a plurality of memory cells, multiple word lines, and at least one bit line. Each of the memory cells is coupled to a unique pair of a bit line and a word line for selectively accessing the memory cells. The memory circuit further includes at least one control circuit coupled to the word lines and operative to selectively change an operation of the memory array between a first data storage mode and at least a second data storage mode as a function of at least one control signal supplied to the control circuit. In the first data storage mode, each of the memory cells is allocated to a corresponding stored logic bit, and in the second data storage mode, at least two memory cells are allocated to a corresponding stored logic bit.

Abstract: A method of integrating a hybrid architecture in a set associative cache having a first type of memory structure for one or more ways in each congruence class, and a second type of memory structure for the remaining ways of the congruence class, includes determining whether a memory access request results in a cache hit or a cache miss; in the event of a cache miss, determining whether LRU way of the first type memory structure is also the LRU way of the entire congruence class, and if not, then copying the contents of the LRU way of the first type memory structure into the LRU way of the entire congruence class, and filling the LRU way of the first type memory structure with a new cache line in the event of a cache miss; and updating LRU bits, depending upon the results of the memory access request.

Abstract: A stacked magnetic tunnel junction (MTJ) structure of a multi-layer magnetic random access memory (MRAM) which includes a plurality of stacked MTJ devices serially connected to each other and an access transistor shared between the stacked MTJ devices. The stacked MTJ structure further includes a write word line through which a write current flows. The write current generates a hard axis magnetic field used to selectively write an MTJ device of the stacked MTJ devices.

Abstract: A stacked magnetic tunnel junction (MTJ) structure of a multi-layer magnetic random access memory (MRAM) which includes a plurality of stacked MTJ devices serially connected to each other and an access transistor shared between the stacked MTJ devices. The stacked MTJ structure further includes a write word line through which a write current flows. The write current generates a hard axis magnetic field used to selectively write an MTJ device of the stacked MTJ devices.

Abstract: A method of integrating a hybrid architecture in a set associative cache having a first type of memory structure for one or more ways in each congruence class, and a second type of memory structure for the remaining ways of the congruence class, includes determining whether a memory access request results in a cache hit or a cache miss; in the event of a cache miss, determining whether LRU way of the first type memory structure is also the LRU way of the entire congruence class, and if not, then copying the contents of the LRU way of the first type memory structure into the LRU way of the entire congruence class, and filling the LRU way of the first type memory structure with a new cache line in the event of a cache miss; and updating LRU bits, depending upon the results of the memory access request.

Abstract: A system and method for accessing a data cache having at least two ways for storing data at the same addresses. A first and second tag memory store first and second sets of tags identifying data stored in each of the ways. A translation device determines from a system address a tag identifying one of the ways. A first comparator compares tags in the address with a tag stored in the first tag memory. A second comparator compares a tag in the address with a tag stored in the second tag memory. A clock signal supplies clock signals to one or both of the ways in response to an access mode signal. The system can be operated so that either both ways of the associative data cache are clocked, in a high speed access mode, or it can apply clock signals to only one of the ways selected by an output from the first and second comparators in a power efficient mode of operation.

Abstract: At least one swapper circuit is electrically connected to a bus between a plurality of entities sharing the bus. The swapper comprises a pair of series connected latches and a tristate circuits, one for each data direction, connected in parallel. The swapper acts as a revolving door, capturing data traveling from either side of the bus and shuffling the data to the other side without collision. A latch circuit is connected at either end of the bus for capturing data arriving from the other side. In addition, each of the drive entities is provided with a master/slave latched equipped with scan-in/scan-out ports, respectively, to enable testing of the circuit by allowing internal nodes of the circuit to be observed without requiring an external connection for each node accessed. In a VLSI arrangement, the scan-in/scan-out ports are connected together from a plurality of such circuits such that a variety of test patterns for various hardware configurations may be realized.

Abstract: A memory and sense amplifier with latched output included therein derives high speed and noise immunity with precharged logic circuits through the separation of sense amplifier enablement and resetting by use of the precharge operation. Inclusion of bit line decoders which are wholly or partially self-resetting and self-precharging in sense amplifier support circuitry allows high performance at extremely short memory operation cycle times. A multiplexor is included which is usable in operating cycles as well as test cycles of the memory and further, in combination with other elements of the memory and sense amplifier arrangement, enables the pipelining of plural memory operations in a single memory cycle.

Abstract: A memory and sense amplifier with latched output included therein derives high speed and noise immunity with precharged logic circuits through the separation of sense amplifier enablement and resetting by use of the precharge operation. Inclusion of bit line decoders which are wholly or partially self-resetting and self-precharging in sense amplifier support circuitry allows high performance at extremely short memory operation cycle times. A multiplexor is included which is usable in operating cycles as well as test cycles of the memory and further, in combination with other elements of the memory and sense amplifier arrangement, enables the pipelining of plural memory operations in a single memory cycle.

Abstract: A switchable voltage generator is provided on-chip together with circuitry including transistors formed in accordance with several different technologies and optimized for operation at different voltages. Provision of a voltage generator on the chip avoids the need for dedicated connections for the lower voltage or voltages. To provide similar levels of burn-in voltage to the different transistor types, a bypass or shunt is provided across the regulator of the voltage generator. The on-chip voltage generator avoids the requirement for a large number of chip or module power connections for each supply voltage required in order to meet current requirements of different portions of chip circuitry. The use of a mode select receiver also avoids the requirement of additional connections to the chip. The combination of one or more switchable voltage generators with a mode select receiver allows economical and efficient electrically stressed testing of the chip at different levels of manufacture.