Abstract: A direct-drive circuit for an inductively-loaded power switching transistor minimizes bias power drain by providing initial base current through a turn-on control transistor and then providing base drive current for the remainder of the power transistor's conduction interval by means of a diode coupled in series with a transformer winding regeneratively coupled to the collector-emitter current path of the power transistor. The turn-on control transistor is held off during this remaining conduction interval thereby reducing bias power drain. For power transistor turn-off, a complementary pair of control switches diverts base current drive and clamps the power transistor base to ground potential. The non-ideal turn-off characteristic of the diode is advantageously used to apply additional reverse potential across the base-emitter junction of the power transistor to effect carrier sweep-out for fast turn-off action.