Patents by Inventor William R. Tribe

William R. Tribe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7804069
    Abstract: A method for imaging a sample, the method comprising the steps of: (a) irradiating the surface of a sample with a source of coherent substantially continuous radiation with a frequency in the range 25 GHz to 100 THz; (b) detecting said radiation reflected from or transmitted by the sample; (c) providing and detecting a probe beam having a phase related to that of the radiation leaving the source; (d) analysing the detected radiation for at least one characteristic feature within the radiation and monitoring any change in phase of such at least one feature in order to derive structural information about the sample as a function of depth from the surface of the sample.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: September 28, 2010
    Assignee: TeraView Limited
    Inventor: William R. Tribe
  • Patent number: 7728296
    Abstract: Apparatus and method for detecting an explosive material, involving irradiating an object with a continuous wave (CW) or pulsed beam of Terahertz radiation, preferably in the frequency range of 100 GHz to 100 THz and detecting radiation transmitted and/or reflected from the object. A spectrum is constructed from the detected radiation, which is indicative of a fundamental property of the explosive material. This constructed spectrum is compared with one or more known spectra of explosive materials to determine whether a likeness exists.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: June 1, 2010
    Assignee: TeraView Limited
    Inventors: Bryan E. Cole, Michael C. Kemp, William R. Tribe, Philip F. Taday
  • Patent number: 7609208
    Abstract: An antenna comprising a photoconductive material (61) and a plurality of spaced apart electrodes (69, 71) provided on said photoconductive material (61), each electrode (69, 71) having at least one facing edge which faces a facing edge of an adjacent electrode, a physical barrier (67) being provided abutting a facing edge of at least one electrode (69, 71), said barrier (67) extending to at least the full height of said facing edge.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: October 27, 2009
    Assignee: Teraview Limited
    Inventors: Michael J. Evans, William R. Tribe
  • Patent number: 7364993
    Abstract: A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimized so as to obtain semiconductor with useful photoconductive properties.
    Type: Grant
    Filed: September 11, 2003
    Date of Patent: April 29, 2008
    Assignee: TeraView Limited
    Inventors: Michael J. Evans, William R. Tribe