Patents by Inventor William Robert Entley
William Robert Entley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240052490Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono- or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.Type: ApplicationFiled: September 11, 2020Publication date: February 15, 2024Applicant: VERSUM MATERIALS US, LLCInventors: MANCHAO XIAO, WILLIAM ROBERT ENTLEY, DANIEL P. SPENCE, RAYMOND NICHOLAS VRTIS, JENNIFER LYNN ANNE ACHTYL, ROBERT GORDON RIDGEWAY, XINJIAN LEI
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Patent number: 11884689Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: GrantFiled: August 29, 2018Date of Patent: January 30, 2024Inventors: Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Xinjian Lei, Jennifer Lynn Anne Achtyl, William Robert Entley
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Publication number: 20230386825Abstract: A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxydisiloxane; and applying energy to the gaseous composition comprising alkoxydisiloxane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxydisiloxane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.50 to ˜3.30, an elastic modulus of from ˜6 to ˜35 GPa, and an at. % carbon of from ˜10 to ˜40 as measured by XPS.Type: ApplicationFiled: October 20, 2021Publication date: November 30, 2023Inventors: MANCHAO XIAO, DANIEL P. SPENCE, XINJIAN LEI, WILLIAM ROBERT ENTLEY, RAYMOND NICHOLAS VRTIS, JENNIFER LYNN ANNE ACHTYL, ROBERT GORDON RIDGEWAY
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Publication number: 20220301862Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel monoalkoxysilane; and applying energy to the gaseous composition comprising a novel monoalkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising a novel monoalkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.80 to about 3.30, an elastic modulus of from about 9 to about 32 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.Type: ApplicationFiled: September 10, 2020Publication date: September 22, 2022Applicant: VERSUM MATERIALS US, LLCInventors: MANCHAO XIAO, WILLIAM ROBERT ENTLEY, DANIEL P. SPENCE, RAYMOND NICHOLAS VRTIS, JENNIFER LYNN ANNE ACHTYL, ROBERT GORDON RIDGEWAY, XINJIAN LEI
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Publication number: 20220293417Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the formula RnH4-nSi as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: ApplicationFiled: August 14, 2020Publication date: September 15, 2022Applicant: VERSUM MATERIALS US, LLCInventors: RAYMOND NICHOLAS VRTIS, SURESH K. RAJARAMAN, WILLIAM ROBERT ENTLEY, JENNIFER LYNN ANNE ACHTYL, ROBERT GORDON RIDGEWAY
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Publication number: 20220044928Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: ApplicationFiled: October 26, 2021Publication date: February 10, 2022Applicant: VERSUM MATERIALS US, LLCInventors: ROBERT G. RIDGEWAY, JENNIFER LYNN ANNE ACHTYL, RAYMOND N. VRTIS, XINJIAN LEI, WILLIAM ROBERT ENTLEY
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Patent number: 11164739Abstract: According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n ??(I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.Type: GrantFiled: February 6, 2019Date of Patent: November 2, 2021Assignee: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou
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Patent number: 11158498Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: GrantFiled: June 18, 2019Date of Patent: October 26, 2021Assignee: Versum Materials US, LLCInventors: Robert G. Ridgeway, Jennifer Lynn Anne Achtyl, Raymond N. Vrtis, Xinjian Lei, William Robert Entley
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Publication number: 20200354386Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: ApplicationFiled: August 29, 2018Publication date: November 12, 2020Inventors: Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Xinjian Lei, Jennifer Lynn Anne Achtyl, William Robert Entley
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Publication number: 20200165727Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane; and applying energy to the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane in the reaction chamber to induce reaction of the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from 2.70 to 3.20, an elastic modulus of from 11 to 25 GPa, and an at. % carbon of from 12 to 31 as measured by XPS.Type: ApplicationFiled: November 26, 2019Publication date: May 28, 2020Applicant: Versum Materials US, LLCInventors: William Robert Entley, Jennifer Lynn Anne Achtyl, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Xinjian Lei
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Publication number: 20200048286Abstract: A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.Type: ApplicationFiled: October 18, 2019Publication date: February 13, 2020Inventors: Manchao Xiao, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei, Daniel P. Spence
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Publication number: 20190385840Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: ApplicationFiled: June 18, 2019Publication date: December 19, 2019Applicant: Versum Materials US, LLCInventors: Robert G. Ridgeway, Jennifer Lynn Anne Achtyl, Raymond N. Vrtis, Xinjian Lei, William Robert Entley
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Patent number: 10395920Abstract: A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.Type: GrantFiled: February 6, 2018Date of Patent: August 27, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
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Publication number: 20190244810Abstract: According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n ??(I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.Type: ApplicationFiled: February 6, 2019Publication date: August 8, 2019Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou
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Patent number: 10249489Abstract: Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous silicon containing precursor composition comprising at least one organosilicon precursor selected from the group consisting of Formula (I) and Formula (II): wherein, R1, R2, R3, R4, R5, and R6 are as defined herein, and applying energy to the gaseous structure forming composition in the vacuum chamber to induce reaction of the at least one organosilicon precursor to deposit a film on at least a portion of the substrate.Type: GrantFiled: October 20, 2017Date of Patent: April 2, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
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Publication number: 20190017167Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: ApplicationFiled: September 18, 2018Publication date: January 17, 2019Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, William Robert Entley, Robert Gordon Ridgeway, Xinjian Lei, John Francis Lehmann, Manchao Xiao
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Patent number: 10106890Abstract: Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: GrantFiled: October 23, 2015Date of Patent: October 23, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Jianheng Li, John Francis Lehmann, Xinjian Lei, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, William Robert Entley
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Publication number: 20180233355Abstract: A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.Type: ApplicationFiled: February 6, 2018Publication date: August 16, 2018Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
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Publication number: 20180122632Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.Type: ApplicationFiled: October 20, 2017Publication date: May 3, 2018Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
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Patent number: 9922818Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: GrantFiled: June 5, 2015Date of Patent: March 20, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei