Abstract: Method of plasma-enhanced chemical vapor deposition by supporting a wafer within a reactor chamber on a wafer support, generating a plasma from acetylene, hydrogen and argon gases using a high frequency RF power supply, and depositing an amorphous hydrogenated carbon film on the wafer. During the deposition, the reactor chamber pressure is within the range 1-6 Torr, and the wafer support temperature is between 200-350 degrees Celsius, such that the deposited amorphous hydrogenated carbon film provides a dielectric layer on the wafer exhibiting low leakage currents of less than 1.0E-07 A/cm2 at an operating voltage of 2 MV/cm and a high breakdown voltage of more than 6 MV/cm.

Abstract: A method of cleaning a chamber of a plasma processing device to remove depositions formed after the plasma processing device has been used to deposit a dielectric material including silicon and carbon by introducing a first cleaning gas mixture into the chamber through a first gas inlet in a first introducing step; generating a first plasma in the chamber from the first cleaning gas mixture in a first cleaning step; introducing a second cleaning gas mixture into a remote plasma source in a second introducing step; generating a second plasma in the remote plasma source from a second cleaning gas mixture in a remote plasma generating step; and performing a second cleaning step by allowing fluorine radicals from the second plasma to enter the chamber and introducing a third cleaning gas mixture into the chamber at the same time as the fluorine radicals from the second plasma.

Abstract: Systems, devices, and methods for pedestrian footfall counting are provided. The system includes a plurality of pedestrian footfall counting devices configured to capture and record optical data of pedestrians. The system further includes one or more relay servers configured to receive the optical data from the pedestrian footfall counting devices. The system further includes one or more counting servers configured to process the optical data and determine a pedestrian footfall count based on the optical data.

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

Abstract: Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be used to deposit silicon dioxide onto a substrate by plasma enhanced chemical vapour deposition.

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

Abstract: Systems, devices, and methods for pedestrian footfall counting are provided. The system includes a plurality of pedestrian footfall counting devices configured to capture and record optical data of pedestrians. The system further includes one or more relay servers configured to receive the optical data from the pedestrian footfall counting devices. The system further includes one or more counting servers configured to process the optical data and determine a pedestrian footfall count based on the optical data.

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.