Abstract: A gasoline service station includes gasoline dispensers and a PIN pad including keypads for receiving personal identification numbers and assembled into a network for securely communicating personal identification numbers from the PIN pads and dispensers to a host computer over unsecured data lines. The PIN pads and dispensers each include means for encryption and outputting of personal identification numbers. A security module includes means for decryption of data associated with each PIN pad and dispenser in a process for the respective PIN pads and dispensers and means for encryption of data associated with the host computer in a process which is different from its decryption of data associated with the PIN pads and dispensers.

Abstract: A gasoline service station includes gasoline dispensers and a PIN pad including keypads for receiving personal identification numbers and assembled into a network for securely communicating personal identification numbers from the PIN pads and dispensers to a host computer over unsecured data lines. The PIN pads and dispensers each include means for encryption and outputting of personal identification numbers. A security module includes means for decryption of data associated with each PIN pad and dispenser in a process for the respective PIN pads and dispensers and means for encryption of data associated with the host computer in a process which is different from its decryption of data associated with the PIN pads and dispensers.

Abstract: A gasoline service station includes gasoline dispensers and a PIN pad including keypads for receiving personal identification numbers and assembled into a network for securely communicating personal identification numbers from the PIN pads and dispensers to a host computer over unsecured data lines. The PIN pads and dispensers each include means for encryption and outputting of personal identification numbers. A security module includes means for decryption of data associated with each PIN pad and dispenser in a process for the respective PIN pads and dispensers and means for encryption of data associated with the host computer in a process which is different from its decryption of data associated with the PIN pads and dispensers.

Abstract: A static rebound exerciser/rehabilitation device for exercising a person regardless of that persons physical condition and particularly for exercising an invalid person. A base platform supports a pair of vertical uprights which have a pivotly attached person supporting boom extending therefrom. The boom is positionable vertically by a hydraulic actuator or jack. A pair of leaf springs are attached to the uprights and extend downwardly from fixed in place ends to distal ends. A pair of cables extend from the distal ends of the leaf springs each around a pulley and extend to common termination member to which is attached a person supporting cable which extends from the end of the boom, a dampening spring and a periodically operated solenoid which pulls against the weight of the person supported by one end of the cable. The person supporting cable passes through a pair of pulleys and extends downward from the distal end of the boom.

Abstract: A static rebound exerciser/rehabilitation device for exercising a person regardless of that persons physical condition. The device includes a jack for vertically positioning a boom interconnected through a translatable cable, spring and hook to a person for elevating that person to an exercisable position. When the person to be exercised is in an exercisable position the cable is caused to oscillate the person vertically up and down against a counterbalance weight system. The amount of lift provided to the person being exercised as well as the frequency of the up and down movement is adjustable in a plurality of discrete amounts.

Abstract: A method for fabricating an N-channel silicon MOS field effect transistor on a P-type substrate. The structure retains the natural isolation between devices and the consequent higher device density in an integrated circuit structure than conventional double diffused MOS field effect transistor devices. The device is fabricated by using ion implantation to create an N-type surface layer in the channel and then overcompensating this layer to create a P-type region near the source by ion implanting P-type ions into the source junction region. The source to substrate capacitance is considerably less than that of conventional double diffused MOS devices which provides an improved circuit performance.

Abstract: An electrically alterable read-mostly MOS memory (commonly referred to as E.sup.2 PROM) employing floating gate memory devices is described. Each word stored in memory may be separately accessed for reading and writing. The memory array is arranged with additional lines and selection means to prevent the high-level programming signals from the X-decoders from programming all the floating gate devices along a selected X-line. A high voltage circuit is described which permits the handling of potentials greater than the grounded gate breakdown voltage associated with the shallow junction devices used in the memory. A unique sensing amplifier is also disclosed which detects low currents at high speeds.

Abstract: Method and compounds are provided for use in the synthesis of steroids wherein a polyolefin is provided having an initiating group having a chalcogen atom in juxtaposition to a double bond, so as to be capable of bond formation to close to form a ring and having a terminating group involving pi unsaturation (a double or triple bond) conjugated to an aromatic ring. Upon acid catalysis, sigma bonds are formed through the interaction of a carbocation formed at the carbon atom bonded to the chalcogen atom and the double bond intermediate the initiating group and the terminating group, which close to form rings of a steroid nucleus, the carbocation interacting with the pi unsaturation conjugated with the aromatic group and being captured by a nucleophile present in the acidic reaction medium. The resulting steroid product may then be modified in known ways to produce known steroids.

Abstract: An electrically programmable and electrically erasable MOS memory device suitable for high density integrated circuit memories is disclosed. Carriers are tunneled between a floating conductive gate and a doped region in the substrate to program and erase the device. A minimum area of thin oxide (70 A-200 A) is used to separate this doped region from the floating gate. In one embodiment, a second layer of polysilicon is used to protect the thin oxide region during certain processing steps.

Abstract: Polyenine compounds are provided having the naturally occurring geometry and a group which in the presence of acid initiates a carbocation cyclization to a steroid or A-nor-steroid structure, particularly the pregnane parent structure. The compounds are formed for the most part by condensation of two units prepared from readily available small molecules and are joined to form a polyenine, usually having a substituted carbocyclic ring which upon contact with a Lewis acid catalyst (includes protonic) cyclizes directly to provide the 5-membered D ring as well as substitution at the C-20 position.

Abstract: Estrogenic steroids are synthesized by combining under conditions favoring the formation of a trans-olefin, a .gamma.-arylpropanal with a 5,5,8,8-tetraalkoxy Wittig reagent. After hydrolysis of the gem-diethers, the resulting dioxo is internally condensed to form a cyclopentenone. The ketone is reduced to an oxy group and the resulting 2-(6'-arylhex-3'-enyl-1)cyclopent-2-en-1-ol or derivative thereof is cyclized to the .DELTA..sup.13,17 -estrene, preferably 17-alkyl-.DELTA..sup.13,17 -estrene with the A ring aromatized. After epoxidation, the 17-alkyl derivative is rearranged to form the 13-alkyl-1,3,5(10)-estratien-17-one. New compounds are provided as intermediates and final products.

Abstract: A method for fabricating an N-channel silicon MOS field effect transistor on a P-type substrate. The structure retains the natural isolation between devices and the consequent higher device density in an integrated circuit structure than conventional double diffused MOS field effect transistor devices. The device is fabricated by using ion implantation to create an N-type surface layer in the channel and then overcompensating this layer to create a P-type region near the source by ion implanting P-type ions into the source junction region. The source to substrate capacitance is considerably less than that of conventional double diffused MOS devices which provides an improved circuit performance.

Abstract: Compositions are provided as well as methods for preparing the compositions which serve as cyclization precursors for the preparation of C-11 alkenyl substituted steroids and nor-steroids. The alkenyl group may be converted after cyclization to a variety of heterosubstituents to provide heterofunctionalized C-11 steroids and nor-steroids. The compounds are provided having an initiator group, which has a chalcoxy atom in juxtaposition to a double bond, an olefinically unsaturated linking group and a terminating group which acts to from a carbocation which reacts with a nucleophile to provide a stable product. The C-11 substituent is found to provide upon cyclization the alpha-configuration, so that the subject compounds provide a direct route to the difficultly accessible alpha-C-11 substituted steroids, or, if desired, the alpha-configuration can be inverted to the beta-configuration.

Abstract: Polyenine compounds are provided having the naturally occurring geometry and a group which in the presence of acid initiates a carbocation cyclization to a steroid or A-nor-steroid structure, particularly the pregnane parent structure. The compounds are formed for the most part by condensation of two units prepared from readily available small molecules and are joined to form a polyenine, usully having a substituted carbocyclic ring which upon contact with a Lewis acid catalyst (includes protonic) cyclizes directly to provide the 5-membered D ring as well as substitution at the C-20 position.

Abstract: Precursor compounds are provided for use in the synthesis of 11-chalcogensubstituted steroids and nor-steroids, particularly 18-, 19- and A-nor-steroids. The compounds are acyclic or substituted polyenine with the olefinic groups having the proper geometry to provide the natural ring fusions upon cyclization. To initiate cyclization, a chalcogen atom is positioned in relation to a double bond, so that on protonation of the chalcogen atom, the resulting carbocation will interact with the double bond to form a pi bond if the cyclization initiator is carbocyclic and a sigma bond if the cyclization initiator is acyclic. Upon cyclization, it is found that the substituent at C-11 of the resulting steroid is in the alpha position. Various methods are provided for producing the cyclization precursor.

Abstract: The invention is concerned with methods for producing improved semiconductor devices. The invention is advantageously employable in the fabrication of insulated-gate field-effect transistor devices. The problem of accurately aligning the gate electrode over the channel region, lying between the source region and the drain region of a field effect transistor, is particularly addressed and solved. Accurate and precise field protection of all areas of the field-effect transistor surrounding the channel, source and drain regions is simply and effectively accomplished. The proper alignment of the gate electrode is largely accomplished by utilizing essentially the same mask structure to define the gate, source and drain regions. The same mask structure is utilized to define the area that is field protected.

Abstract: A field effect transistor with spaced source and drain regions of a first type conductivity in a monocrystalline semiconductor body having a background impurity of a second opposite type conductivity, the improvement being a buried layer of a second type conductivity impurity having an average concentration higher than the impurity concentration of the background impurity that is located just beneath the insulating layer in the field regions of the device and at a greater depth in the gate region, the depth in the gate region being approximately equal to the thickness of the field insulating layer less the thickness of the gate insulating layer.