Abstract: This invention relates to methods of crosslinking polysaccharides to form crosslinked polysaccharides, and more particularly, to crosslinked polysaccharides that may be incorporated in fluids useful in, for example, applications requiring a crosslinked viscoelastic gel. In one embodiment, the present invention provides a method of crosslinking a polysaccharide comprising the steps of: providing a metal coordinating group having a reactive site, derivatizing a polysaccharide with the metal coordinating group to produce a derivatized polysaccharide having bidentate ligands, and crosslinking the derivatized polysaccharide having bidentate ligands with a metal ion to form a metal ligand coordination complex.

Abstract: A magnesium amide for use as a magnesium donor not having any Mg—C bonds. The compound is useful for doping GaN with Mg+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.

Abstract: A magnesium amide for use as a magnesium donor not having any Mg--C bonds. The compound is useful for doping GaN with Mg.sup.+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.

Abstract: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

Abstract: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

Abstract: A new class of Group II bis(oligoetherthiolate) compounds is described for use in chemical vapor deposition processes in that it is volatile and soluble in common organic solvents, thereby rendering it suitable in the preparation of displays with full color, bright phosphors, which at present use ZnS-based technology. The drawback with ZnS is that the blue efficiency is too low. In another competing technology, MGa.sub.2 S.sub.4 -based materials, the sputtered films are amorphous, and the crystallization temperature is too high for inexpensive glass, thereby necessitating the use of expensive quartz. The instant invention secures the advantage of not depositing amorphous material in a two-step process. Rather a one-step process is used to get crystalline material directly, thereby providing a superior route to MGa.sub.2 S.sub.4 in that it has the potential to give higher quality films at reduced cost.

Abstract: Preceramic polymers formed by reacting B.sub.10 H.sub.14-n R.sub.n, (where R is a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, or a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, and n is a number from zero to about six) with a diamine of the formulaR.sup.1 R.sup.2 N--(E).sub.q --NR.sup.4 R.sup.5,where R.sup.1, R.sup.2, R.sup.4 and R.sup.

Abstract: New soluble preceramic polymers formed by reacting B.sub.10 H.sub.14-n R.sub.n, (where R is a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, or a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, and n is a number from zero to about six) with a diamine in an organic solvent are disclosed. Preferably the diamine has the formulaR.sup.1 R.sup.2 N-R.sup.3 -NR.sup.4 R.sup.5where R.sup.1, R.sup.2, R.sup.4 and R.sup.5 are H, a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, or a di- or triorganosilyl. R.sup.