Patents by Inventor William SCHAFFERS

William SCHAFFERS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240308271
    Abstract: A guard for a seal of a wheeled industrial machine, the guard comprising an cylindrical, annular body having a first plate, a second plate with an upper portion and a lower portion, and a connecting portion extending between the first plate and the second plate; wherein the first plate extends in a radially inward direction from the connecting portion and includes a plurality of holes; wherein the upper portion is configured to extend into a corresponding slot of a rotating element of a wheel of the wheeled industrial machine; and wherein the lower portion is configured to extend toward an axle of the wheeled industrial machine.
    Type: Application
    Filed: March 16, 2023
    Publication date: September 19, 2024
    Applicant: Caterpillar Inc.
    Inventors: Hari Prasad KAFLE, Steven Todd HAROLDSON, James William SCHAFFER, Robert Leo GOSDA, Daniel Patrick VERTENTEN
  • Patent number: 12006219
    Abstract: Described herein are integrated thermochemical processes for the deliberate decomposition, extraction and conversion of coal into high-value products and goods via solvent extraction, chemical reaction and/or separation. The described systems and methods are versatile and may be used to generate a variety of intermediate, derivative and finished high value products including chemicals (aromatics, asphaltenes, naphthalenes, phenols and precursors for the production of polyamides, polyurethanes, polyesters, graphitic materials), polymer composite products (resins, paints, coatings, adhesives), agricultural materials, building materials, carbon fiber, graphene products and other materials that are substantially more valuable that the energy generated via combustion.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: June 11, 2024
    Assignee: UNIVERSITY OF WYOMING
    Inventors: William Schaffers, David Bell, John Myers, Kaspars Krutkramelis, Paul Behrens
  • Publication number: 20230347687
    Abstract: A shield assembly is provided for an axle assembly of a machine. The machine includes a ground engaging device including a hub. The hub defines a cavity and an inboard opening to the cavity. The axle assembly includes a spindle, a final drive rotatably coupled to the spindle, and a gap disposed between the spindle and the final drive. The shield assembly has a shield body coupled to the axle assembly and disposed within the cavity of the ground engaging device. The shield body is located above portions of the spindle and the final drive, and extends over the gap.
    Type: Application
    Filed: April 27, 2022
    Publication date: November 2, 2023
    Applicant: Caterpillar Inc.
    Inventors: Gerald William Gavin, James William Schaffer, Matthew M. DeSanto, Jeremy Dean Folkerts, Travis Edward Schwark
  • Publication number: 20230147191
    Abstract: An article of manufacture for providing a self-defense cellular telephone case is disclosed.
    Type: Application
    Filed: November 9, 2021
    Publication date: May 11, 2023
    Inventor: William Schaffer
  • Publication number: 20220177312
    Abstract: Described herein are integrated thermochemical processes for the deliberate decomposition, extraction and conversion of coal into high-value products and goods via solvent extraction, chemical reaction and/or separation. The described systems and methods are versatile and may be used to generate a variety of intermediate, derivative and finished high value products including chemicals (aromatics, asphaltenes, naphthalenes, phenols and precursors for the production of polyamides, polyurethanes, polyesters, graphitic materials), polymer composite products (resins, paints, coatings, adhesives), agricultural materials, building materials, carbon fiber, graphene products and other materials that are substantially more valuable that the energy generated via combustion.
    Type: Application
    Filed: March 12, 2020
    Publication date: June 9, 2022
    Inventors: William SCHAFFERS, David BELL, John MYERS, Kaspars KRUTKRAMELIS, Paul BEHRENS
  • Patent number: 10840100
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20190139773
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Application
    Filed: November 26, 2018
    Publication date: May 9, 2019
    Inventors: Paul CAREY, Aaron Muir HUNTER, Dean JENNINGS, Abhilash J. MAYUR, Stephen MOFFATT, William SCHAFFER, Timothy N. THOMAS, Mark YAM
  • Patent number: 10141191
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: November 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Patent number: 8518838
    Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: August 27, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20120145684
    Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Application
    Filed: February 21, 2012
    Publication date: June 14, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20100323532
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Application
    Filed: August 12, 2010
    Publication date: December 23, 2010
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Patent number: 7569463
    Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: August 4, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ajit Balakrishna, Paul Carey, Dean Jennings, Abhilash Mayur, Stephen Moffatt, William Schaffer, Mark Yam
  • Publication number: 20070218644
    Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Application
    Filed: July 25, 2006
    Publication date: September 20, 2007
    Inventors: Ajit Balakrishna, Paul Carey, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Mark Yam
  • Publication number: 20070212859
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Application
    Filed: July 25, 2006
    Publication date: September 13, 2007
    Inventors: Paul CAREY, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20030040130
    Abstract: A modeling method to identify optimum laser parameters for pulsed laser annealing of implanted dopants into patterned semiconductor substrates is provided. The modeling method provides the optimum range of wavelength, pulse length, and pulse shape that fully anneals the implanted regions while preserving the form and function of ancillary structures. Improved material parameters for the modeling are identified. The modeling method is used to determine an experimental verification method that does not require a fully equipped laser processing station. The model and verification are used to specify an optimum laser system that satisfies the requirements of large area processing of silicon integrated circuits. An alexandrite laser operating between 700 nm and 810 nm with a pulse length of 5 ns to 20 nS is identified for implant anneal of shallow dopants in silicon.
    Type: Application
    Filed: August 9, 2001
    Publication date: February 27, 2003
    Inventors: Abhilash J. Mayur, Mark Yam, Paul G. Carey, William Schaffer