Patents by Inventor William SCHAFFERS
William SCHAFFERS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240308271Abstract: A guard for a seal of a wheeled industrial machine, the guard comprising an cylindrical, annular body having a first plate, a second plate with an upper portion and a lower portion, and a connecting portion extending between the first plate and the second plate; wherein the first plate extends in a radially inward direction from the connecting portion and includes a plurality of holes; wherein the upper portion is configured to extend into a corresponding slot of a rotating element of a wheel of the wheeled industrial machine; and wherein the lower portion is configured to extend toward an axle of the wheeled industrial machine.Type: ApplicationFiled: March 16, 2023Publication date: September 19, 2024Applicant: Caterpillar Inc.Inventors: Hari Prasad KAFLE, Steven Todd HAROLDSON, James William SCHAFFER, Robert Leo GOSDA, Daniel Patrick VERTENTEN
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Patent number: 12006219Abstract: Described herein are integrated thermochemical processes for the deliberate decomposition, extraction and conversion of coal into high-value products and goods via solvent extraction, chemical reaction and/or separation. The described systems and methods are versatile and may be used to generate a variety of intermediate, derivative and finished high value products including chemicals (aromatics, asphaltenes, naphthalenes, phenols and precursors for the production of polyamides, polyurethanes, polyesters, graphitic materials), polymer composite products (resins, paints, coatings, adhesives), agricultural materials, building materials, carbon fiber, graphene products and other materials that are substantially more valuable that the energy generated via combustion.Type: GrantFiled: March 12, 2020Date of Patent: June 11, 2024Assignee: UNIVERSITY OF WYOMINGInventors: William Schaffers, David Bell, John Myers, Kaspars Krutkramelis, Paul Behrens
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Publication number: 20230347687Abstract: A shield assembly is provided for an axle assembly of a machine. The machine includes a ground engaging device including a hub. The hub defines a cavity and an inboard opening to the cavity. The axle assembly includes a spindle, a final drive rotatably coupled to the spindle, and a gap disposed between the spindle and the final drive. The shield assembly has a shield body coupled to the axle assembly and disposed within the cavity of the ground engaging device. The shield body is located above portions of the spindle and the final drive, and extends over the gap.Type: ApplicationFiled: April 27, 2022Publication date: November 2, 2023Applicant: Caterpillar Inc.Inventors: Gerald William Gavin, James William Schaffer, Matthew M. DeSanto, Jeremy Dean Folkerts, Travis Edward Schwark
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Publication number: 20230147191Abstract: An article of manufacture for providing a self-defense cellular telephone case is disclosed.Type: ApplicationFiled: November 9, 2021Publication date: May 11, 2023Inventor: William Schaffer
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Publication number: 20220177312Abstract: Described herein are integrated thermochemical processes for the deliberate decomposition, extraction and conversion of coal into high-value products and goods via solvent extraction, chemical reaction and/or separation. The described systems and methods are versatile and may be used to generate a variety of intermediate, derivative and finished high value products including chemicals (aromatics, asphaltenes, naphthalenes, phenols and precursors for the production of polyamides, polyurethanes, polyesters, graphitic materials), polymer composite products (resins, paints, coatings, adhesives), agricultural materials, building materials, carbon fiber, graphene products and other materials that are substantially more valuable that the energy generated via combustion.Type: ApplicationFiled: March 12, 2020Publication date: June 9, 2022Inventors: William SCHAFFERS, David BELL, John MYERS, Kaspars KRUTKRAMELIS, Paul BEHRENS
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Patent number: 10840100Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: GrantFiled: November 26, 2018Date of Patent: November 17, 2020Assignee: Applied Materials, Inc.Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
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Publication number: 20190139773Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: ApplicationFiled: November 26, 2018Publication date: May 9, 2019Inventors: Paul CAREY, Aaron Muir HUNTER, Dean JENNINGS, Abhilash J. MAYUR, Stephen MOFFATT, William SCHAFFER, Timothy N. THOMAS, Mark YAM
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Patent number: 10141191Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: GrantFiled: August 12, 2010Date of Patent: November 27, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
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Patent number: 8518838Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: GrantFiled: February 21, 2012Date of Patent: August 27, 2013Assignee: Applied Materials, Inc.Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
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Publication number: 20120145684Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: ApplicationFiled: February 21, 2012Publication date: June 14, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
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Publication number: 20100323532Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: ApplicationFiled: August 12, 2010Publication date: December 23, 2010Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
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Patent number: 7569463Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: GrantFiled: July 25, 2006Date of Patent: August 4, 2009Assignee: Applied Materials, Inc.Inventors: Ajit Balakrishna, Paul Carey, Dean Jennings, Abhilash Mayur, Stephen Moffatt, William Schaffer, Mark Yam
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Publication number: 20070218644Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: ApplicationFiled: July 25, 2006Publication date: September 20, 2007Inventors: Ajit Balakrishna, Paul Carey, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Mark Yam
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Publication number: 20070212859Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: ApplicationFiled: July 25, 2006Publication date: September 13, 2007Inventors: Paul CAREY, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
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Publication number: 20030040130Abstract: A modeling method to identify optimum laser parameters for pulsed laser annealing of implanted dopants into patterned semiconductor substrates is provided. The modeling method provides the optimum range of wavelength, pulse length, and pulse shape that fully anneals the implanted regions while preserving the form and function of ancillary structures. Improved material parameters for the modeling are identified. The modeling method is used to determine an experimental verification method that does not require a fully equipped laser processing station. The model and verification are used to specify an optimum laser system that satisfies the requirements of large area processing of silicon integrated circuits. An alexandrite laser operating between 700 nm and 810 nm with a pulse length of 5 ns to 20 nS is identified for implant anneal of shallow dopants in silicon.Type: ApplicationFiled: August 9, 2001Publication date: February 27, 2003Inventors: Abhilash J. Mayur, Mark Yam, Paul G. Carey, William Schaffer