Abstract: An apparatus comprising an input to couple to a negative voltage source; and circuitry to detect whether the input has crossed a negative voltage threshold, wherein the circuitry comprises a first capacitor that is selectively coupled to the first input and a second capacitor that is selectively coupled to a second input coupled to a positive voltage source.

Abstract: Techniques to adapt the DC bias of voltage regulators for memory devices as a function of bandwidth demand are described. In one example, a non-volatile memory device includes a plurality of voltage regulator slices, wherein outputs of the plurality of voltage regulators slices are tied together to provide a voltage to perform operations on the array. The voltage regulator slices can be enabled or disabled based on a signal from a memory controller, such as an indication of an upcoming change in bandwidth demand for a rank including the memory device.