Abstract: Herein are described methods of treating a human subject having acute myeloid leukemia (AML) that is refractory to induction therapy, wherein an MDM2 inhibitor is administered before or concurrently with chemotherapy, which may comprise induction therapy. Refractory AML may be predicted based on decreased expression of MTF2 in cells from a hematological sample obtained from the subject. Also provided are methods of predicting and treating AML responsive to MDM2/HDM2 inhibitors, based on MTF2 expression. One set of additional biomarkers useful in the predictions comprise one or more of H3K27me3, CD84, CD92, MDM2, NPM1, PRICKLE1, SET, ABCB6, POLQ, POLK, POLH, ARTIMIS, MCM6, CD327, CD90 and PARP1. Another set of additional biomarkers useful in the predictions include at least one of H3K27me3, MDM2, NPM1, SET, CD84 and PRICKLE1. Methods of selecting a patient for treatment with an MDM2 inhibitor before or concurrently with chemotherapy are also provided, along with kits and uses.

Abstract: Herein are described methods of treating a human subject having acute myeloid leukemia (AML) that is refractory to induction therapy, wherein an MDM2 inhibitor is administered before or concurrently with chemotherapy, which may comprise induction therapy. Refractory AML may be predicted based on decreased expression of MTF2 in cells from a hematological sample obtained from the subject. Also provided are methods of predicting and treating AML responsive to MDM2/HDM2 inhibitors, based on MTF2 expression. One set of additional biomarkers useful in the predictions comprise one or more of H3K27me3, CD84, CD92, MDM2, NPM1, PRICKLE1, SET, ABCB6, POLQ, POLK, POLH, ARTIMIS, MCM6, CD327, CD90 and PARP1. Another set of additional biomarkers useful in the predictions include at least one of H3K27me3, MDM2, NPM1, SET, CD84 and PRICKLE1. Methods of selecting a patient for treatment with an MDM2 inhibitor before or concurrently with chemotherapy are also provided, along with kits and uses.

Abstract: The invention provides recombinant Listeria that constitutively express Prf A and comprise polynucleotides that encode polypeptides such as tumor or infectious agent antigens, operably linked to a PrfA responsive regulatory agent. Methods of using the Listeria, and compositions thereof, to induce or enhance an immune response and/or in the treatment of disease are provided. Methods of producing the bacteria are also provided.

Abstract: The invention relates to vectors, compositions, and methods for identifying genes primarily expressed in selected lineages. The invention also relates to novel genes primarily expressed in selected lineages, proteins encoded by the novel genes and truncations, analogs, homologs, and isoforms of the proteins and uses of the proteins and genes.

Abstract: The invention also relates to novel genes primarily expressed in hematopoietic lineages, polypeptides encoded by the novel genes and truncations, analogs, homologs, and isoforms of the polypeptides; and, uses of the polypeptides and genes.

Abstract: A metal nitride oxide semiconductor device capable of use within a memory cell, having a more heavily doped region of the same type as the substrate provided directly under the channel of the depletion mode device. Application of a positive write voltage to the gate of the device, with the substrate at 0 volts potential and the source and drain biased to a suitable positive level, results in avalanche operation of the device whereby charge is stored in a nitride oxide interface under the gate, thereby converting the device to enhancement mode operation. The charge can be removed with the source and drain biased to the 0 volt potential of the substrate and a positive erase signal applied to the gate. A four device memory cell is disclosed.

Abstract: An integrated circuit structure with full dielectric isolation, i.e., the electrical isolation is provided by electrically insulative material, is formed by ion bombarding a silicon substrate with ions such as nitrogen, oxygen or carbon to implant subsurface region containing such ions and heating the resulted bombarded substrate to a temperature sufficient to react the introduced ions with the substrate to form a subsurface layer which has a different etchability than silicon. An epitaxial layer of monocrystalline silicon is then deposited on the substrate, after which a pattern of regions of electrically insulating material is formed extending through the epitaxial layer beyond the substrate surface into contact with the subsurface layer to laterally surround a plurality of pockets in said silicon. An electrically insulative layer is formed on the surface of the epitaxial layer continuous with the electrically insulating lateral regions.