Patents by Inventor William Stanley Richardson

William Stanley Richardson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Higher density insulated gate field effect circuit
    Patent number: 4118642
    Abstract: An insulated gate field effect transistor (IGFET) memory or logic circuit is implemented at higher density levels by employing thick oxide IGFET's as load elements. Additionally, the gate electrode structure of the IGFET load devices and their channel lengths with respect to the channel length of parasitic IGFET devices are selectively controlled in order to insure that the parasitic devices remain nonconductive.
    Type: Grant
    Filed: February 4, 1977
    Date of Patent: October 3, 1978
    Assignee: Motorola, Inc.
    Inventor: William Stanley Richardson