Abstract: A computerized method is disclosed for grouping alerts through machine learning while implementing certain time constraints. The method includes receiving an alert to be assigned to any of a plurality of existing issues or to a newly created issue, the alert including a temporal field that includes a timestamp of an arrival time of the alert, wherein an issue is a grouping of one or more alerts, determining a subset of existing issues from the plurality of existing issues that each satisfy time constraints, wherein the time constraints correspond to (i) a time elapsed between a most recent alert of a first existing issue and a timestamp of the alert, or (ii) a maximum issue time length of the first existing issue, and deploying a trained machine learning model to assign the alert to either an existing issue of the subset of existing issues or a newly created issue.

Abstract: A computerized method is disclosed for grouping alerts through machine learning. The method including receiving an alert to be assigned to any of a plurality of existing issues or to a newly created issue, wherein an issue is a grouping of alerts, determining a temporal distance between the alert and each of the existing issues, determining either of (i) a numerical distance between the alert and each of the existing issues for a particular numerical field, or (ii) a categorical distance between the alert and each of the existing issues for a particular categorical field, determining an overall distance between the alert and each of the existing issues, and assigning the alert to either (i) an existing issue having a shortest overall distance to the alert that satisfies one or more time constraints, or (ii) the newly created issue.

Abstract: A computerized method is disclosed for grouping alerts and providing remediation recommendation. The method includes receiving the alert to be assigned to an existing open issue or a newly created issue, wherein an issue is a grouping of one or more alerts, assigning the alert to either a first existing open issue or the newly created issue by determining a weighted sum of the distance between the feature vectors of the alert and each existing open issue, determining a weighted sum of the distance between the feature vectors of the alert and each closed issue, and generating a user interface that illustrates an assignment of the alert and at least one of (i) a closed issue having a shortest distance to the alert or (ii) recommended remediation efforts associated with the closed issue having the shortest distance to the alert.

Abstract: A computerized method is disclosed for retraining machine learning models based on user feedback. The method includes receiving user feedback indicating a change is to be made to an assignment of one or more alerts, wherein the one or more alerts were assigned by a machine learning model implementing a distance metric, wherein an issue is a grouping of at least one alert, constructing a convex optimization procedure to minimize an adjustment of weights of the distance metric, retraining the machine learning model by adjusting the weights of the distance metric in accordance with the convex optimization procedure, and evaluating one or more subsequently received alert using the retrained machine learning model. Changes to be made to the assignment include any of merging of two issues, splitting of two issues based on time or an alert field, or reassignment of an alert from a first issue to a second issue.

Abstract: A method of generating a mask used in fabrication of a semiconductor device includes, in part, selecting a source candidate, generating a process simulation model that includes a defect rate in response to the selected source candidate, performing a first optical proximity correction (OPC) on the data associated with the mask in response to the process simulation model, assessing one or more lithographic evaluation metrics in response to the OPC mask data, computing a cost in response to the assessed one or more lithographic evaluation metrics, and determining whether the computed cost satisfies a threshold condition. In response to the determination that the computed cost does not satisfy the threshold condition, a different source candidate may be selected.

Abstract: A method of generating a mask used in fabrication of a semiconductor device includes, in part, selecting a source candidate, generating a process simulation model that includes a stochastic variance band model in response to the selected source candidate, performing a first optical proximity correction (OPC) on the data associated with the mask in response to the process simulation model, assessing one or more lithographic evaluation metrics in response to the OPC mask data, computing a cost in response to the assessed one or more lithographic evaluation metrics, and determining whether the computed cost satisfies a threshold condition. In response to the determination that the computed cost does not satisfy the threshold condition, a different source candidate may be selected.

Abstract: A method of generating a mask used in fabrication of a semiconductor device includes, in part, selecting a source candidate, generating a process simulation model that includes a defect rate in response to the selected source candidate, performing a first optical proximity correction (OPC) on the data associated with the mask in response to the process simulation model, assessing one or more lithographic evaluation metrics in response to the OPC mask data, computing a cost in response to the assessed one or more lithographic evaluation metrics, and determining whether the computed cost satisfies a threshold condition. In response to the determination that the computed cost does not satisfy the threshold condition, a different source candidate may be selected.

Abstract: A method of generating a mask used in fabrication of a semiconductor device includes, in part, selecting a source candidate, generating a process simulation model that includes a stochastic variance band model in response to the selected source candidate, performing a first optical proximity correction (OPC) on the data associated with the mask in response to the process simulation model, assessing one or more lithographic evaluation metrics in response to the OPC mask data, computing a cost in response to the assessed one or more lithographic evaluation metrics, and determining whether the computed cost satisfies a threshold condition. In response to the determination that the computed cost does not satisfy the threshold condition, a different source candidate may be selected.

Abstract: A modular fender assembly for a vehicle includes a fender body having first and second body portions defining respective portions of the exterior of the fender body. First and second joiner brackets are bonded onto inner ends of the first and second body portions respectively. The joiner brackets have joiner flanges which can be joined with one another in parallel abutment to join the first and second body portions. Either body portion of the fender can thus be trimmed to length to suit the application prior to bonding the joiner bracket in position according to the new trimmed length. The joiner brackets typically have multiple overlapping and interlocking joiner flanges which span across the abutted seam between the two adjacent fender body portions, including upright stiffener flanges, for improving strength to reduce bending and sagging of the fender assembly at the seam.

Abstract: A modular fender assembly for a vehicle includes a fender body having first and second body portions defining respective portions of the exterior of the fender body. First and second joiner brackets are bonded onto inner ends of the first and second body portions respectively. The joiner brackets have joiner flanges which can be joined with one another in parallel abutment to join the first and second body portions. Either body portion of the fender can thus be trimmed to length to suit the application prior to bonding the joiner bracket in position according to the new trimmed length. The joiner brackets typically have multiple overlapping and interlocking joiner flanges which span across the abutted seam between the two adjacent fender body portions, including upright stiffener flanges, for improving strength to reduce bending and sagging of the fender assembly at the seam.

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

Abstract: Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

Abstract: Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.

Abstract: Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

Abstract: A finished-construction binary photomask used to fabricated integrated circuitry includes a substrate having a device region and a non-device region. The device region has a transparent substrate having a pair of spaced adjacent binary features formed thereover. The spaced adjacent binary features have an opaque material and a phase-shifting material. The phase-shifting material is received between the transparent substrate and the opaque material. Sidewalls of the spaced adjacent binary features may include a coating layer. Other embodiments, including methods, are contemplated.

Abstract: Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.