Abstract: A phased array semiconductor laser comprises a plurality of spatially disposed multiple lasing elements formed relative to an active region providing optical cavities and multi-emitters for light wave generation and propagation under lasing conditions. The optical field of the lasing elements are coupled into the optical cavities of adjacent lasing elements to provide a phased locked condition across the array. Structural means associated with the laser causes regions between the optical cavities to produce higher gain in those between regions as compared to the gain experienced in the optical cavities by spatially modulating the optical overlap of the optical field of each of the lasing elements laterally across the array so as to favor the fundamental supermode over the other potential supermodes of the array laser.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: A semiconductor laser characterized by having a combination index and gain guiding region in the optical cavity established between end facets of the laser.

Abstract: An improved collimating and conversion means is provided in a single system component that can be easily formed in a cost effective manner to convert an elliptically shaped collimated beam into a circular beam. The single component of this invention is a semiconductor laser beam collimator comprising means for collimating an output beam of radiation emitted from a semiconductor laser having a substantially elliptical cross sectional configuration and converting the emitted beam of radiation into a beam of circular cross sectional configuration, the means characterized by consisting of a graded-index (GRIN) rod or fiber with one end of the rod being beveled at an angle. The length of the GRIN rod bevel and the bevel angle are chosen according to the particular diameter and optical power of the emitted beam of the semiconductor laser.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: An injection laser is provided with quantum size effect transparent waveguiding. The laser includes an active layer having an active region wherein carrier recombination occurs under lasing conditions. The active layer has passive waveguide end regions between the active region and the laser end facets that are sufficiently thin in layer thickness to form a transparent waveguide having a quantum well effect so that radiative recombination will not occur in these regions.

Abstract: An optical scanner with a thin waveguide medium on a substrate includes means to couple a wide collimated beam of radiation into one end of the medium. A periodic array of substantially parallel, spaced electrodes are associated with one major surface of the medium. At least a portion of their electrode lengths extend in a direction substantially parallel with the direction of radiation propagating through the medium. Supply means is provided to apply voltages in a pattern to the electrodes which varies from one electrode to the next adjacent electrode to a predetermined value over several of the electrodes and the same pattern of voltages or a similar pattern of different voltages is applied over several of the next adjacent electrodes up to the predetermined value. In this manner, the pattern is completed across the electrode array to produce a corresponding approximation of a desired phase retardation along a phase front of the propagating radiation in the medium.

Abstract: An injection laser includes a plurality of contiguous semiconductor layers deposited on a substrate, one of the layers being an active layer and having a lower bandgap and higher index of refraction relative to at least cladding layers immediately adjacent to the active layer. The active layer is provided with an active region to permit carrier recombination and support radiation propagating under lasing conditions in a optical waveguide cavity established between transverse end facets of the laser. Means is incorporated on and into the surface of the laser to form a current confinement region to the active region. The extremities of the active region fall short of the end facets so that the regions of the active layer between the active region function as a passive waveguide for the propagating radiation in the optical cavity.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: A linear array of injection diode lasers formed on a common substrate is utilized to provide modulated scanning beams for a photosensitive medium. A scanning device, preferably a multifaceted mirror polygon driven at a constant speed, is placed in the optical path between the array and the photosensitive medium, as is a focusing lens. To provide additive exposure intensity the plane of the emitting surface of the array is oriented relative to the scanning device so that all of the beams emitted by the array are caused to illuminate the same scan line of the photosensitive medium whereby each beam scans the same data spots on the same line of the photosensitive medium such that additive exposure of those spots is achieved.

Abstract: In a semiconductor injection laser with a nonplanar pattern in the substrate, growth of the plurality of layers comprising the laser structure is accomplished in vapor phase epitaxy to produce a lateral spatial thickness variation (LSTV) in the active region of the laser. The LSTV profile is one of or combination of the profiles disclosed in FIG. 2, producing an effective, although small, lateral refractive index variation in the active region, thereby permitting the maintenance of the lowest order transverse mode along the plane of the active region.

Abstract: Heterostructure injection lasers include a combination optically coupled active and passive waveguide means forming an optically confining channel or strip between end facets. A passive or transparent waveguide means in the vicinity of the laser facets optically confines the radiation thereto in both dimensions transverse to the direction of propagation. The passive means is coupled to an active region of the laser which also optically confines the propagating radiation to the active region in both dimensions transverse to the direction of propagation. The active strip does not extend to the end facets of the laser. The combination active and passive means provides for high power, low divergence output beam, fundamental transverse mode control, lower operational current thresholds and the substantial elimination of laser astigmatism found in strip buried heterostructure lasers.

Abstract: A monolithic laser scanning device includes a semiconductor laser region integral with but spaced from an optical scanning region. These regions are optically coupled which may include a continuous transparent or passive waveguide medium. The periodic array of substantially parallel spaced electrodes are associated with the waveguide medium in the optical scanning region. The electrodes extend in the same direction as the propagating radiation in the medium. The voltages are applied in a pattern to the electrodes which voltages vary from one electrode to the next adjacent electrode to a predetermined value over several of the electrodes. The same pattern of voltages or a similar pattern of different voltages is applied over several of the next adjacent electrodes to the predetermined value until the pattern is completed across the electrode array to produce a corresponding approximation of a desired phase retardation along the phase front of the propagating radiation.

Abstract: A fiber optic device basically comprising an optical fiber/interference filter combination finds useful application in optical communication systems for wavelength selection or bandwidth selection from a multiwavelength light source or emitter. If the emitter is a semiconductor laser, the device may be also employed to provide single longitudinal mode control at the selected wavelength or bandpass.

Abstract: Integrated laser diode devices are disclosed in which small light signals or small current signals applied thereto produce large changes in the output. One embodiment discloses a homostructure optical device with symmetric optically excited regions. Another embodiment discloses a single-heterostructure optical device with a single optically excited region. Another embodiment discloses a double-heterostructure optical device with dual optically excited regions. A further embodiment integrates an electronic device with a diode laser in accordance with the principles of the present invention. Still another embodiment discloses an optical triode laser device in which a small input light results in an amplified light output signal.

Abstract: In an injection laser of the type having a mesa provided on the substrate, at least one or more radiation confinement layers is provided in the laser and with the active layer form an enlarged optical cavity (LOC) for radiation propagation to focus the beam produced into a narrow index guided filament.

Abstract: A semiconductor injection laser is provided with an integrated optical injector means on same substrate as the laser which has an optical emitter region noncolinear with the axis of optical emission from the laser but optically coupled to the laser at one or more points along its length. The optical injector means is independently operative prior to or simultaneously with the independently operated laser to inject radiation into the laser optical emitter region to decrease the response time of the laser to pulsed current modulation.

Abstract: Enhanced higher order mode discrimination is obtained in injection lasers with lateral spatial thickness variations (LSTV) in the active layer with (1) the proper refractive index quantitative differences in the cladding layers contiguous with the active layer and (2) by fabricating the active layer to have a rapidity in its LSTV from the maximum thickness to the minimum thickness that is very gradual.

Abstract: In a heterostructure injection laser having an active layer sandwiched by a pair of intermediate index layers, a very thin low refractive index and high bandgap may be employed between at least active layer and one intermediate layer or at least contiguous with a surface of at least one intermediate layer remote from the active layer. These thin layers may be applied in various positional combinations to produce desired effects on fundamental mode guiding.

Abstract: A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.